Zobrazeno 1 - 10
of 13
pro vyhledávání: '"R J, Almassy"'
Publikováno v:
Biophysical journal. 37(1)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::34fa136ea2b6139f4c7ed6f8b08e416b
https://pubmed.ncbi.nlm.nih.gov/19431469
https://pubmed.ncbi.nlm.nih.gov/19431469
Publikováno v:
Journal of Applied Physics. 51:4842-4846
A sharp line transition at 1.51385 eV has been observed in the photoluminescence spectra of an epitaxially grown crystal of GaAs. A Si3N4 cap was applied by plasma deposition and the crystal was then annealed at 850 °C for 15 min. The sharp emission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d536a1c5d035152df4a7b96cb62ee84
https://doi.org/10.1063/1.328318
https://doi.org/10.1063/1.328318
Publikováno v:
Solid State Communications. 31:365-368
The first observation of six sharp photoluminescence lines with energies less than the energies of the lines associated with a radiative recombination of a single exciton bound to a neutral acceptor in high purity epilayers of GaAs at liquid helium t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f5a0eaec723758aebc7c85053f9bea9
https://doi.org/10.1016/0038-1098(79)90557-x
https://doi.org/10.1016/0038-1098(79)90557-x
Publikováno v:
Physical Review B. 13:761-767
The exciton energy spectrum in GaAs has been studied by photoluminescence and reflection. The photoluminescence was excited using a krypton laser (6471 \AA{}). We observed for the first time the spectra for the excited states of the free exciton in G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea5a2ea1dfcfd296079d770edbc23ccb
https://doi.org/10.1103/physrevb.13.761
https://doi.org/10.1103/physrevb.13.761
Publikováno v:
Physical Review B. 13:2507-2510
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fab048ccf6fdbdcffc69017b5ae3f3ce
https://doi.org/10.1103/physrevb.13.2507
https://doi.org/10.1103/physrevb.13.2507
Publikováno v:
Journal of Biological Chemistry. 264:17681-17690
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76e85759d2ab36bb68ad15ff762f81b1
https://doi.org/10.1016/s0021-9258(19)84625-2
https://doi.org/10.1016/s0021-9258(19)84625-2
Publikováno v:
Physical Review Letters. 44:204-207
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cabcdf412f17d57322efa80de3df4ab
https://doi.org/10.1103/physrevlett.44.204
https://doi.org/10.1103/physrevlett.44.204
Publikováno v:
Solid State Communications. 38:1053-1056
We report the first observation of three different residual donors in undoped high purity vapor phase epitaxial GaAs using the high resolution photoluminescence spectroscopy technique at temperatures ∼ 2 K. The binding energies of these shallow don
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8289fae9c52fbe8f7c34a0f7e4b21869
https://doi.org/10.1016/0038-1098(81)90016-8
https://doi.org/10.1016/0038-1098(81)90016-8
Publikováno v:
Journal of Electronic Materials. 7:263-277
Magneto-optical analysis of prominent photoluminescence lines from GaAs FET structures has been performed. Fifteen samples were investigated. Each consisted of a sulfur doped active layer on a high resistivity buffer layer (both epitaxially grown fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b07bd3cfaa15cf941eb900f147348fa1
https://doi.org/10.1007/bf02655678
https://doi.org/10.1007/bf02655678
Publikováno v:
Physical Review B. 1:4784-4791
A comparison between the ultraviolet-reflectivity spectrum and the characteristic energy-loss spectrum of ZnO has been carried out. Reflectivity measurements made over an energy range of band gap to 22 eV yielded a spectrum with structure at 3.34, 5.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cebf2734c0ad49c7f5551abb7d18c7ff
https://doi.org/10.1103/physrevb.1.4784
https://doi.org/10.1103/physrevb.1.4784