Zobrazeno 1 - 9
of 9
pro vyhledávání: '"R G Gann"'
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:1530
The surface topography and the chemical composition of anodic oxides on GaP have been studied. The surface of the as grown anodic oxide was featureless but annealing at T≥600 °C causes the formation of hollow bumps and blisters which increase in s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::725cf24e5acc677d63b31e7d6b455e1c
https://doi.org/10.1116/1.585461
https://doi.org/10.1116/1.585461
Publikováno v:
Surface Science. 113:233-238
A random potential due to surface roughness has long been recognized as the dominant scattering mechanism at high electron concentrations in quantized inversion layers of semiconductors, but little definitive understanding is truly available. Here, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9f06160c96e76f220b26fc0ae78cbf3
https://doi.org/10.1016/0039-6028(82)90591-x
https://doi.org/10.1016/0039-6028(82)90591-x
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2:588-592
The surface topography and interface structure after thermal oxidation of GaP is reported for the temperature range 600 to 1220 °C. An extensive network of interfacial voids was observed in the substrate under the oxide film. The size of the voids w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bab5eff9462bcb4f77bcfb56e03177ca
https://doi.org/10.1116/1.572451
https://doi.org/10.1116/1.572451
Publikováno v:
Journal of Applied Physics. 63:506-509
The thermal oxidation of InP in dry oxygen has previously been shown to result in mixed oxide layers, even when grown at pressures as high as 500 atm. This appears to be caused by the slow diffusion of P and O2 through the oxide relative to In. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d876eb57d8965c372f1360b64d47fa3
https://doi.org/10.1063/1.340271
https://doi.org/10.1063/1.340271
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1:1486-1490
The surface topography of the thermal oxides on InP are shown to blister for growth temperatures somewhat above 600 °C. It appears that the oxide softens sufficiently to allow the trapped phosphorus at the interface to expand, thus causing the surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f86f7807d5208de008a6f9c9ceb9ee28
https://doi.org/10.1116/1.572174
https://doi.org/10.1116/1.572174
Autor:
Ondrej L. Krivanek, R. G. Gann, D. Fathy, S. M. Goodnick, Carl W. Wilmsen, David K. Ferry, James R. Sites
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 1:803
Scattering of inversion layer electrons at the oxide semiconductor interface is a major source of mobility degradation in MOSFETs. We have studied, on the same sample, high resolution TEM cross sections of the Si–SiO2 interface and detailed tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d9d81346ad5387d3b55b41c5c0e34e
https://doi.org/10.1116/1.582696
https://doi.org/10.1116/1.582696
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 2:516
In order to make a viable InP MISFET technology, two major problems remain to be solved: (1) instability in the channel current and (2) variations in the channel mobility with processing. These problems are strongly affected by the chemical and physi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26421bea5e80b14ed1aa4f8d2a2c2fd0
https://doi.org/10.1116/1.582810
https://doi.org/10.1116/1.582810
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 3:1103
The growth of thermal oxides in high pressure dry oxygen has been investigated and compared with oxides grown at 1 atm. The outer layers of the high and low pressure oxides are almost identical but the interfaces are significantly different. The 1 at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcd703e99b07f09a267c672b513bf2f3
https://doi.org/10.1116/1.583062
https://doi.org/10.1116/1.583062