Zobrazeno 1 - 10
of 21
pro vyhledávání: '"R G, Mani"'
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)
Abstract A metallic state with a vanishing activation gap, at a filling factor $$\nu = 8/5$$ ν = 8 / 5 in the untilted specimen with $$n= 2 \times 10^{11} cm^{-2}$$ n = 2 × 10 11 c m - 2 , and at $$\nu = 4/3$$ ν = 4 / 3 at $$n=1.2 \times 10^{11} c
Externí odkaz:
https://doaj.org/article/a11c58c3d2de49a9901d8226d60fb25b
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
Abstract Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I dc . The I dc tuned gia
Externí odkaz:
https://doaj.org/article/0074647655d34d5b999546f927f6ae06
Autor:
C Rasadi, Munasinghe, B, Gunawardana, R L, Samaraweera, Z, Wang, T R, Nanayakkara, A, Kriisa, C, Reichl, W, Wegscheider, R G, Mani
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 30(31)
The magnetotransport properties of the high mobility GaAs/AlGaAs two-dimensional electron gas systems have been examined to determine the influence of the ac current bias on the carrier temperature. The changes in the line shape of Shubnikov-de Haas
Autor:
R. G. Mani
Publikováno v:
International Journal of Modern Physics B. 23:2703-2707
Tuned narrow-band-sensing of microwave and terahertz radiation can be realized by subjecting an irradiated two-dimensional electron system to both a static and a time varying magnetic field, and detecting at the harmonics of the modulation.
Autor:
R. G. Mani
Publikováno v:
International Journal of High Speed Electronics and Systems. 17:777-788
A high mobility two-dimensional electron system exhibits large changes in the resistance, and zero-resistance states, under microwave and Terahertz excitation. We describe associated experimental results and the possibility of using this system as a
Autor:
R. G. Mani, K. V. Klitzing
Publikováno v:
Physical Review B. 46:9877-9880
A low-temperature (0.03
Autor:
S. Ramanathan, R. G. Mani
An electrical study of thin $VO_{2}$ films in the vicinity of the structural phase transition at $68^{0}C$ shows (a) that the electrical resistance $R$ follows $log (R)$ $\propto$ $-T$ over the $T$-range, $20 < T < 80 ^{0}C$ covering both sides of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c59db7cdfa1fb9f35fba625cce3a1ac5
http://arxiv.org/abs/0707.0885
http://arxiv.org/abs/0707.0885
Publikováno v:
Physical review letters. 92(14)
We examine the phase and the period of the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices utilizing in situ magnetic field calibration by electron spin resonance of diphenyl-picryl-hydrazal. The results confirm a f-independent
Publikováno v:
Semiconductor Science and Technology. 5:S287-S289
Low-field transport studies of HgTe/CdTe superlattices grown by laser-assisted molecular beam epitaxy show weak localisation effects for H