Zobrazeno 1 - 10
of 365
pro vyhledávání: '"R G, Clark"'
Autor:
J. Hollman, N. Acosta, M. Bautista, J. McCalder, L. Man, A. Buchner Beaudet, B. Waddell, J. Chen, D. Kuzma, R. G. Clark, N. Ruecker, K. Frankowski, C. Hubert, M. Parkins, M. C. Ryan, G. Achari
Publikováno v:
Lecture Notes in Civil Engineering ISBN: 9789811910609
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2620754ceaac74faa709c18a86de5fc
https://doi.org/10.1007/978-981-19-1061-6_47
https://doi.org/10.1007/978-981-19-1061-6_47
A practical method of nuclear spin cooling in the mK region, based on dramatic reduction in the spin-lattice relaxation time T1 at the antiferromagnetic-spin flop and spin flopparamagnetic phase transitions, is described. Far lower temperatures (down
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b30def93f82f1261947103ee3ce3dfd
https://doi.org/10.1007/bf02147400
https://doi.org/10.1007/bf02147400
Two new results are reported from experiments on an ultra-high mobility GaAs-GaA1As heterojunction at 30 mK in magnetic fields up to 15 Tesla; (i) observation of the full set of fractional states v = 1 + pq with q = 3, 5, 7 for the higher energy spin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db52a4f6bd3277b77407f8a0a3634eb3
https://doi.org/10.1016/0038-1098(86)90442-4
https://doi.org/10.1016/0038-1098(86)90442-4
Publikováno v:
IEEE Transactions on Electron Devices. 57:539-547
We have assessed the use of commercial silicon-on-sapphire CMOS electronics in control circuits, which could be used to interface with quantum bits at low temperatures. We have characterized n-type MOSFETs, p-type MOSFETs, and an n+-diffusion resisto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c5a4349a918c327cb348f3bf47e7918
https://doi.org/10.1109/ted.2009.2037381
https://doi.org/10.1109/ted.2009.2037381
Autor:
Mikko Möttönen, Juha-Matti Pirkkalainen, David N. Jamieson, Andrew S. Dzurak, Changyi Yang, Kok Wai Chan, A. D. C. Alves, Jessica van Donkelaar, Kuan Yen Tan, Andrea Morello, R. G. Clark
Publikováno v:
Nano Letters. 10:11-15
We have developed nanoscale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately implanted phosphorus donors. The devices provide a high-level of control of key parameters required for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76f5bce468aa155eaa111d857ca6c2a7
https://doi.org/10.1021/nl901635j
https://doi.org/10.1021/nl901635j
Publikováno v:
Nano Letters. 7:2051-2055
We report the fabrication and measurement of silicon quantum dots with tunable tunnel barriers in a narrow-channel field-effect transistor. Low-temperature transport spectroscopy is performed in both the many-electron ( approximately 100 electrons) r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e9c335ac8e72fddd020903cf72761a6
https://doi.org/10.1021/nl070949k
https://doi.org/10.1021/nl070949k
Autor:
R. Brenner, Lloyd C. L. Hollenberg, T. Hopf, Andrew S. Dzurak, C. C. Escott, Søren Andresen, David N. Jamieson, C. Yang, Cameron J. Wellard, R. G. Clark
Publikováno v:
Nano Letters. 7:2000-2003
We demonstrate time-resolved control and detection of single-electron transfers in a silicon device implanted with exactly two phosphorus donors. Charge state relaxation at millikelvin temperature is shown to be dominated by phonon emission and backg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44b5045c2a9943c53fc61762ba1b5823
https://doi.org/10.1021/nl070797t
https://doi.org/10.1021/nl070797t
Publikováno v:
New Zealand Veterinary Journal. 55:23-29
To compare the virulence of a 'bovine' and an 'ovine' strain of Mycobacterium avium subsp paratuberculosis (M. ptb) in red deer (Cervus elaphus) after experimental inoculation orally, and to examine the relationship between the dose of the bovine str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd4774a73bb9db008c0c92e502239b19
https://doi.org/10.1080/00480169.2007.36731
https://doi.org/10.1080/00480169.2007.36731
Autor:
David N. Jamieson, S.M. Hearne, V. Chan, Søren Andresen, R. G. Clark, C. Yang, T. Hopf, Steven Prawer, E. Gauja, Andrew S. Dzurak, Christopher Ian Pakes, Fay E. Hudson
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 249:221-225
Fabrication of nanoscale devices that exploit the rules of quantum mechanics to process information presents formidable technical challenges because of the need to control quantum states at the level of individual atoms, electrons or photons. We have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8a5382493760953dd593f7bca12d909
https://doi.org/10.1016/j.nimb.2006.04.002
https://doi.org/10.1016/j.nimb.2006.04.002