Zobrazeno 1 - 10
of 46
pro vyhledávání: '"R E Pritchard"'
Autor:
R. E. Pritchard, William Roughead
A detailed account of the sensational murder trial that shocked Victorian Scotland and ended in Glasgow's last public hanging.In July of 1865, Dr. Edward William Pritchard was put on trial for the murder of his wife and mother-in-law. He slowly poiso
Autor:
R. E. Pritchard
The romantic and practical entanglements practiced by the working class, gentry, nobility, and even the Queen—from the author of Scandalous Liaisons. Most people have always been interested in sex, love and marriage. Now, this entertaining and info
Autor:
R. E. Pritchard
The swashbuckling life of the Elizabethan explorer and colonial governor is vividly recounted in this historical biography.Captain John Smith is best remembered for his association with Pocahontas, but this was only a small part of an extraordinary l
Autor:
R. E. Pritchard
Thomas Coryate (1576-1617) was one of the great early travellers, opening up Europe, the eastern Mediterranean, the Holy Land and Mogul India to his amazed - and sometimes disgusted - readers. In 1608 he set out to travel - mostly on foot - through F
Autor:
Paul N. Stavrinou, R. E. Pritchard, Tim Jones, M. J. Ashwin, R. S. Williams, Glenn Parry, Rupert F. Oulton, J.H. Neave
Publikováno v:
Journal of Applied Physics. 90:475-480
Arrays of GaAs pyramids with square (001) bases of length 1–5 μm have been fabricated by molecular beam epitaxy regrowth on pre-patterned GaAs (001) substrates. The optical properties of the pyramid faces have been studied by microreflection and m
Autor:
Edward C. Lightowlers, C.A.J. Ammerlaan, M J Binns, R.C. Newman, M J Ashwin, Robert J. Falster, J. H. Tucker, Tom Gregorkiewicz, R. E. Pritchard, I. S. Zevenbergen
Publikováno v:
Semiconductor Science and Technology, 12, 1404-1408. IOP Publishing Ltd.
Electronic transitions of shallow thermal donors (STDs) in aluminium-doped Czochralski (CZ) Si annealed at C have different energies from those of STDs observed in annealed, hydrogenated boron-doped CZ Si. A third type of STD is observed in boron-dop
Publikováno v:
Journal of Crystal Growth. 164:371-376
Heavily carbon-doped GaAs, AlGaAs and InGaAs were grown by chemical beam epitaxy using CBr 4 as the extrinsic dopant source. SIMS-derived C concentrations of up to 10 21 cm -3 were achieved for GaAs. Comparison of SIMS, Hall and CV data showed 100% a
Autor:
R. E. Pritchard
Dickens's England was a time of unprecedented energy and change which laid the foundations of our own modern society. There was a new world coming into being: new towns, new machines, new and revolutionary ideas, new songs and dances, music-halls and
Autor:
R E Pritchard
Dickens's England was a time of unprecedented energy and change which laid the foundations of our own modern society. There was a new world coming into being: new towns, new machines, new and revolutionary ideas, new songs and dances, music-halls and
Autor:
C Button, R. E. Pritchard, R C Newman, T J Bullough, J S Roberts, B.R. Davidson, J. Wagner, T B Joyce
Publikováno v:
Semiconductor Science and Technology. 10:639-644
H-CAs pairs in epitaxial layers of AlAs have been studied by local vibrational mode (LVM) Raman spectroscopy and complemented by infrared (IR) absorption measurements performed on the same samples. Inelastic light scattering by the symmetric A1+ mode