Zobrazeno 1 - 10
of 65
pro vyhledávání: '"R E DeWames"'
Autor:
Jonathan Schuster, R. E. DeWames
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XVII.
In this work we review the reported results as well as the analytical and 3D numerical modeling tools we used to analyze dark current and quantum efficiency data from lattice matched InP/In0.53Ga0.47/InP double layer planar 15 μm pixel pitch focal p
Publikováno v:
Journal of Electronic Materials. 46:6295-6305
In this paper, we use the theory of Evans and Landsberg, which is a generalization of the Shockley–Read–Hall recombination statistics in the space charge region (SCR), to include effects of Auger and radiative recombination processes that are als
Publikováno v:
Infrared Technology and Applications XLV.
There is great interest in MWIR Ga-free type II strained layer superlattice (T2SLS) nBn detectors for background limited photodetectors (BLIP) operating at temperatures higher than InSb (T ≥ 150K compared to T≈ 80-90K). Recently, Ting et al. [Pro
Autor:
R. E. DeWames, Priyalal Wijewarnasuriya, Nibir K. Dhar, Jonathan Schuster, Eric A. DeCuir, Enrico Bellotti
Publikováno v:
Journal of Electronic Materials. 45:4654-4662
Imaging in the extended short-wavelength infrared (eSWIR) spectral band (1.7–3.0 μm) for astronomy applications is an area of significant interest. However, these applications require infrared detectors with extremely low dark current (less than 0
Autor:
Enrico Bellotti, Jagmohan Bajaj, Philip Perconti, Jonathan Schuster, R. E. DeWames, Meredith Reed
Publikováno v:
SPIE Proceedings.
Timely technology transition with minimal risk requires an understanding of fundamental and technology limitations of material synthesis, device operation and design controllable parameters. However, this knowledge-based approach requires substantial
Autor:
Nibir K. Dhar, R. E. DeWames, Priyalal Wijewarnasuriya, Jonathan Schuster, Enrico Bellotti, Eric A. DeCuir
Publikováno v:
SPIE Proceedings.
A key design feature of P+-on-n HgCdTe detectors is the depth of the p-type region. Normally, homojunction architectures are utilized where the p-type region extends into the narrow-gap absorber layer. This facilitates the collection of photo-carrier
Autor:
C. H. Swartz, Zhi-Gang Yu, M. A. Berding, Thomas H. Myers, D. D. Edwall, Srinivasan Krishnamurthy, R. E. DeWames
Publikováno v:
Journal of Electronic Materials. 34:873-879
We calculate the radiative, Auger, and the Shockley-Read-Hall recombination rates with Fermi-Dirac statistics and accurate band structures to explain the measured temperature dependence and doping dependence of minority carrier lifetimes in three n-
Autor:
D. S. Smith, P. N. Dolan, A. I. D'Souza, Priyalal S. Wijewarnasuriya, Maryn G. Stapelbroek, J. C. Ehlert, R. E. DeWames
Publikováno v:
Journal of Electronic Materials. 32:633-638
The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg1−xCdxTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sound
Autor:
Donald E. Cooper, G. Hildebrandt, Kadri Vural, Jose M. Arias, Donald N. B. Hall, James D. Garnett, Craig A. Cabelli, M. Zandian, J. G. Pasko, J. Chow, Mark Farris, M. Carmody, R. E. DeWames
Publikováno v:
Journal of Electronic Materials. 32:803-809
We report on Hg1−xCdxTe mid-wavelength infrared (MWIR) detectors grown by molecular-beam epitaxy (MBE) on CdZnTe substrates. Current-voltage (I-V) characteristics of HgCdTe-MWIR devices and temperature dependence of focal-plane array (FPA) dark cur
Autor:
A. I. D'Souza, Maryn G. Stapelbroek, Priyalal S. Wijewarnasuriya, R. E. DeWames, G. M. Williams
Publikováno v:
Journal of Electronic Materials. 31:699-704
This paper investigates 1/f noise performance of very-long-wavelength infrared (VLWIR) Hg1-xCdxTe (cutoff wavelengths λc = 15 µm and λc = 16 µm) photodiodes at 78 K, where detector current is varied by changing detector area, detector bias, and i