Zobrazeno 1 - 10
of 184
pro vyhledávání: '"R Cirelli"'
Akademický článek
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Autor:
R Cirelli, Paolo Giorgi Rossi, MF Sacristani, M Cotti Cottini, A Tosini, M Chiaramonte, Luca Romano, Roberta Marchione, L Pasquale, Massimo Confortini, Manuela Piccolomini, G Pieracci, V Scalvinoni, C Pedretti, Francesca Carozzi, C Morana, Serena Domenighini, D Chiudinelli, C Ruggeri
Publikováno v:
Journal of Medical Screening. 22:38-48
Objective We present the results of the first screening round and the first year of the second round of the Valcamonica Human Papillomavirus (HPV) pilot screening project. Setting From 2010 to 2012, the entire target female population (aged 25–64)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e50ff5855172ee4c01fa5676d2b3b1a2
https://doi.org/10.1177/0969141314561707
https://doi.org/10.1177/0969141314561707
Publikováno v:
International Journal of Modern Physics A. 25:2212-2222
We measure the Casimir force gradient between silicon surfaces with nanoscale, rectangular corrugations and a gold sphere attached to a micromechanical torsional oscillator. By comparing the force gradients on the corrugated surfaces to that on a smo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfab96202f53f23b7c05b5288531293b
https://doi.org/10.1142/s0217751x10049487
https://doi.org/10.1142/s0217751x10049487
Autor:
J. Feng, William M. Mansfield, R. Cirelli, Jiunn B. Heng, Avi Kornblit, V. Dimitrov, O. Dimauro, Milton Feng, J.F. Miner, T.W. Sorsch, A. Taylor, Gregory Timp, J.E. Bower, F. Klemens, E. Ferry, Kaethe Timp, R. Chan, M. Hafez
Publikováno v:
Solid-State Electronics. 52:899-908
We have fabricated and tested the performance of sub-50nm gate nMOSFETs to assess their suitability for mixed signal applications in the super high frequency (SHF) band, i.e. 3-30GHz. For a 30nm×40 μm×2 device, we found f(T) =465GHz at V(ds)=2V, V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3d35bef83d93d8d1f30357481eb4e47
https://doi.org/10.1016/j.sse.2008.01.025
https://doi.org/10.1016/j.sse.2008.01.025
Autor:
Chien-Shing Pai, T.W. Sorsch, E. Ferry, William M. Mansfield, R. Papazian, Daniel Lopez, Low Yee, David A. Ramsey, R. Frahm, Vladimir A. Aksyuk, E. Bower, F. Klemens, Flavio Pardo, John Vanatta Gates, R. Cirelli, Nagesh R. Basavanhally, Warren Yiu-Cho Lai, Pat G. Watson
Publikováno v:
IEEE Transactions on Advanced Packaging. 30:622-628
An ultra high-density hybrid integration for micro-electromechanical system (MEMS) mirror chips with several thousand inputs/outputs has been developed. The integration scheme involving flip-chip assembly provides electrical signal to individual mirr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04daa39ac70895ede862d3dca47cb6d3
https://doi.org/10.1109/tadvp.2007.906395
https://doi.org/10.1109/tadvp.2007.906395
Autor:
F.P. Klemens, Peter Frisella, William M. Mansfield, Anthony T. Fiory, Nuggehalli M. Ravindra, T.W. Sorsch, Aditya Agarwal, Markus Rabus, E. Ferry, J.F. Miner, R. Cirelli
Publikováno v:
Journal of Electronic Materials. 35:877-891
Fabrication of devices and circuits on silicon wafers creates patterns in optical properties, particularly the thermal emissivity and absorptivity, that lead to temperature nonuniformity during rapid thermal processing (RTP) by infrared heating metho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eac06d47e970d08e8959a2c506b61feb
https://doi.org/10.1007/bf02692543
https://doi.org/10.1007/bf02692543
Akademický článek
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Autor:
Chien-Shing Pai, P.A. Busch, W.Y.C. Lai, Joseph Ashley Taylor, Hyongsok Tom Soh, Dan M. Marom, J.E. Bower, F. Klemens, R. Cirelli, Chorng-Ping Chang, Sang Hyun Oh, T.W. Sorsch, Dennis S. Greywall
Publikováno v:
Journal of Microelectromechanical Systems. 12:702-707
A new approach is presented for fabricating monolithic crystalline silicon tilting-mirror microoptoelectromechanical systems (MOEMS) devices. The activation electrodes, etched from a thick silicon layer deposited over insulating oxide onto the top su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0cd360a03cc06f3ff56f29b0e277135
https://doi.org/10.1109/jmems.2003.818068
https://doi.org/10.1109/jmems.2003.818068
Autor:
F. Klemens, Stanley Pau, Omkaram Nalamasu, G. P. Watson, Allen G. Timko, J. Frackoviak, Gregory Timp, R. Cirelli
Publikováno v:
Microelectronic Engineering. 53:119-122
A multiple exposure technique is used to print various types of patterns with critical dimensions much smaller than the wavelength of light used for exposure. The process latitude of the exposure can be very large because it is limited by the large p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba5f7020006087ab5fb95b5eabdc8d2f
https://doi.org/10.1016/s0167-9317(00)00277-x
https://doi.org/10.1016/s0167-9317(00)00277-x
Autor:
Andrew R. Neureuther, James R. Sweeney, O. Dimov, R. Cirelli, Omkaram Nalamasu, Pat G. Watson, Ebo H. Croffie, Allen H. Gabor, F. M. Houlihan, M. Cheng, I. Rushkin
Publikováno v:
Microelectronic Engineering. 53:437-442
A new TCAD software tool named STORM (SimulationTOols forResistModels) has been developed to support the quantitative modeling of resist processes in deep submicron lithography. Models for post exposure bake, silylation, wet development and dry devel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe774225216cfcca817baf72fbb9b91e
https://doi.org/10.1016/s0167-9317(00)00351-8
https://doi.org/10.1016/s0167-9317(00)00351-8