Zobrazeno 1 - 10 of 149 pro vyhledávání: '"R B Khamankar"'
1
Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics
Autor: A. Shanware, Joe W. McPherson, R. B. Khamankar
Publikováno v: Journal of Applied Physics. 88:5351-5359
A molecular physics-based complementary model, which includes both field and current, is introduced to help resolve the E versus 1/E-model controversy that has existed for many years as to the true physics behind time-dependent dielectric breakdown (
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::802b59e8aa54ab2a25010c6848db32d7
https://doi.org/10.1063/1.1318369
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2
A complementary molecular-model (including field and current) for TDDB in SiO 2 dielectrics
Autor: R. B. Khamankar, A. Shanware, J.W. McPherson
Publikováno v: Microelectronics Reliability. 40:1591-1597
A molecular physics-based complementary model, which includes both field and current, is introduced to help resolve the E versus 1/E TDDB model controversy that has existed for many years It is shown here that either TDDB model can be valid for certa
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::678f26c6a1b4a706748fa32e582465ec
https://doi.org/10.1016/s0026-2714(00)00172-4
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3
Molecular model for intrinsic time-dependent dielectric breakdown in SiO2dielectrics and the reliability implications for hyper-thin gate oxide
Autor: R B Khamankar, J W McPherson
Publikováno v: Semiconductor Science and Technology. 15:462-470
SiO2 films, at constant electric field, show a significant reduction in time-dependent dielectric breakdown (TDDB) performance when the thickness tox is scaled below 4.0 nm. This reduction in TDDB performance is coincident with and scales with the in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6f36f694967591311ac4a502d06def86
https://doi.org/10.1088/0268-1242/15/5/305
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5
Akademický článek
A non-defect precursor gate oxide breakdown model.
Autor: Cheung, Kin P.
Publikováno v: Journal of Applied Physics; 6/21/2023, Vol. 133 Issue 23, p1-11, 11p
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6
Akademický článek
Physical model for the frequency dependence of time-dependent dielectric breakdown (TDDB).
Autor: McPherson, J. W.
Publikováno v: AIP Advances; May2023, Vol. 13 Issue 5, p1-10, 10p
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7
Akademický článek
Influence of dielectric constant on dielectric strength by defect discharge and molecular polarization in solid insulation materials.
Autor: Liu, Jing, Su, Jiancang, Zhao, Liang, Li, Rui, Lu, Yuanrong, Liu, Xiaolong
Publikováno v: Journal of Applied Physics; 2019, Vol. 125 Issue 11, pN.PAG-N.PAG, 9p, 2 Color Photographs, 3 Charts, 5 Graphs
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8
Akademický článek
Leakage current conduction, hole injection, and time-dependent dielectric breakdown of n-4H-SiC MOS capacitors during positive bias temperature stress.
Autor: Samanta, Piyas, Mandal, Krishna C.
Publikováno v: Journal of Applied Physics; 2017, Vol. 121 Issue 3, p1-13, 13p, 2 Diagrams, 1 Chart, 13 Graphs
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9
Akademický článek
Modified Ramped Current Stress Technique for Monitoring Thin Dielectrics Reliability and Charge Degradation.
Autor: Andreev, Dmitrii V., Maslovsky, Vladimir M., Andreev, Vladimir V., Stolyarov, Alexander A.
Publikováno v: Physica Status Solidi. A: Applications & Materials Science; May2022, Vol. 219 Issue 9, p1-5, 5p
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