Zobrazeno 1 - 7
of 7
pro vyhledávání: '"R A Wachnik"'
Publikováno v:
Journal of Applied Physics. 78:3756-3768
The electromigration short‐length effect has been investigated by testing a two‐level structure with Ti‐AlCu‐Ti stripes and interlevel tungsten (W) stud vias. This investigation represents a complete study of the short‐length effect using a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39f2803ddc9c1da64d86c3ea123bc86c
https://doi.org/10.1063/1.360749
https://doi.org/10.1063/1.360749
Publikováno v:
Applied Physics Letters. 66:1897-1899
A paradox arises when the two‐parameter log‐normal distribution is used to predict early electromigration lifetimes of a two‐level structure with Ti–AlCu–Ti stripes and interlevel W stud‐vias. The paradox is a direct consequence of the ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9519e58b499b152414e2545234453696
https://doi.org/10.1063/1.113314
https://doi.org/10.1063/1.113314
Publikováno v:
AIP Conference Proceedings.
The effect of line length on the electromigration behavior of a two-level structure with Ti-AlCu-Ti stripes and interlevel tungsten (W) stud-vias has been investigated. This investigation also represents a complete study of the short-length effect us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::506dc87022618e41dd2ebfee97935a5f
https://doi.org/10.1063/1.50944
https://doi.org/10.1063/1.50944
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 5:2131-2134
We have measured dopant distribution profiles by spreading resistance and secondary ion mass spectrometry (SIMS) as well as Schottky contact properties at Si surfaces cleaned by a high‐temperature anneal in vacuum. After sufficiently long anneal a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7df85e1f9efd859eb5cddb2de5934be8
https://doi.org/10.1116/1.574934
https://doi.org/10.1116/1.574934
Publikováno v:
Journal of Applied Physics. 61:4619-4625
We have measured dopant distribution profiles by spreading resistance and secondary ion mass spectroscopy (SIMS) profiling at silicon surfaces annealed to high temperature in vacuum. Accumulation of electrically active p‐type dopants is found to oc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2632d1dfb871d89ed9de31a62930046a
https://doi.org/10.1063/1.338372
https://doi.org/10.1063/1.338372
Publikováno v:
Journal of Applied Physics. 63:4734-4740
We have observed the onset of degradation of bipolar transistor characteristics under high current forward stress at room temperature. The observed degradation may be attributed to interface states generated next to the sidewall oxide at the emitter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4671107526c691e2b03bf91e2ebcf590
https://doi.org/10.1063/1.340131
https://doi.org/10.1063/1.340131
