Zobrazeno 1 - 10
of 39
pro vyhledávání: '"R A, Kinsey"'
Publikováno v:
Human Pathology. 41:1593-1600
Summary Gastric-type epithelium and islands of oxyntic mucosa in duodenal biopsies are considered by some to be part of a spectrum of metaplastic change related to peptic disorders. This study was designed to assess prevalence and associations of met
Publikováno v:
Current Applied Physics. 6:579-582
Despite considerable research on the nitride based dilute magnetic semiconductors (DMS) there is still considerable uncertainty as to the origin of the room temperature ferromagnetism, with clusters and precipitates suggested. We have studied chromiu
Autor:
Roger J. Reeves, Andreas Markwitz, P. A. Anderson, S. M. Durbin, V. J. Kennedy, R. J. Kinsey, Chito E. Kendrick
Publikováno v:
Smart Materials and Structures. 15:S87-S91
Single-crystalline and polycrystalline indium nitride films have been grown on (0001) sapphire and silica glass using plasma assisted molecular beam epitaxy (PAMBE). Optical measurements on the films revealed a luminescence feature in the vicinity of
Autor:
S. M. Durbin, A. Asadov, Chito E. Kendrick, Wei Gao, P. A. Anderson, Roger J. Reeves, R. J. Kinsey
Publikováno v:
physica status solidi (c). 2:2320-2323
Wurtzite and zincblende InN have been grown on (111) and (100) oriented YSZ respectively using a PAMBE technique. Despite a 3D growth mode, the Hall mobility, carrier concentration and PL intensities in the case of (111) YSZ substrates surpassed that
Autor:
Wei Gao, Andreas Markwitz, V. J. Kennedy, S. M. Durbin, R. J. Kinsey, Chito E. Kendrick, A. Asadov, P. A. Anderson, Roger J. Reeves
Publikováno v:
physica status solidi (c). 2:2236-2239
A series of polycrystalline InGaN films have been grown on fused silica glass using a plasma assisted molecular beam epitaxy (PAMBE) system. Films grown at 600 °C showed pronounced signs of indium segregation, with indium segregating to the substrat
Publikováno v:
Journal of Crystal Growth. 269:167-172
Indium nitride is not yet fully characterized or understood, despite being the endpoint of the commercially valuable In x Ga 1− x N system. There is still considerable controversy over such fundamental issues as the band gap, with recent evidence s
Autor:
R. H. Kinsey
Publikováno v:
British medical journal. 2(1177)
Publikováno v:
Microscopy research and technique. 70(3)
A JEOL JEM-3000F field emission, analytical, high-resolution transmission electron microscope (HRTEM) was used to study InN films grown on sapphire substrates. It was found that, while the InN films maintained the hexagonal (wurtzite) structure, InN
Publikováno v:
Conference on Optoelectronic and Microelectronic Materials and Devices, 2004..
InN grown on sapphire and silica glass, and InGaN alloys grown on silica glass have been studied by TEM, optical absorption, photoluminescence (PL) and photoconductivity (PC). The peak PL location from InGaN films was found to reduce steadily in ener
Publikováno v:
Microscopy and Microanalysis. 11