Zobrazeno 1 - 10
of 165
pro vyhledávání: '"Rüdiger, Andreas"'
Autor:
Jin, Xin, Aglieri, Vincenzo, Jeong, Young-Gyun, Pezeshki, Atiye, Skokan, Lilian, Shagar, Mostafa, Jia, Yuechen, Bianucci, Pablo, Ruediger, Andreas, Orgiu, Emanuele, Toma, Andrea, Razzari, Luca
Two-dimensional materials, including transition metal dichalcogenides, are attractive for a variety of applications in electronics as well as photonics and have recently been envisioned as an appealing platform for phonon polaritonics. However, their
Externí odkaz:
http://arxiv.org/abs/2405.08851
Autor:
Dong, Fang a, Wu, Mingjie a, Chen, Zhangsen a, Chen, Ning b, Bakhtbidar, Mohammad a, Ruediger, Andreas a, Zhang, Gaixia c, ⁎, Sun, Shuhui a, ⁎
Publikováno v:
In Nano Energy January 2025 133
Autor:
Mesoudy, Abdelouadoud El, Lamri, Gwénaëlle, Dawant, Raphaël, Arias-Zapata, Javier, Gliech, Pierre, Beilliard, Yann, Ecoffey, Serge, Ruediger, Andreas, Alibart, Fabien, Drouin, Dominique
Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in developing
Externí odkaz:
http://arxiv.org/abs/2106.11808
Autor:
Mesoudy, Abdelouadoud El, Machon, Denis, Ruediger, Andreas, Jaouad, Abdelatif, Alibart, Fabien, Ecoffey, Serge, Drouin, Dominique
Publikováno v:
In Thin Solid Films 31 March 2023 769
Akademický článek
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Akademický článek
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Publikováno v:
In Journal of Environmental Chemical Engineering December 2022 10(6)
Autor:
Li, Weiwei, He, Qian, Wang, Le, Zeng, Huizhong, Bowlan, John, Ling, Langsheng, Yarotski, Dmitry A., Zhang, Wenrui, Zhao, Run, Dai, Jiahong, Gu, Junxing, Shen, Shipeng, Guo, Haizhong, Pi, Li, Wang, Haiyan, Wang, Yongqiang, Velasco-Davalos, Ivan A., Wu, Yangjiang, Hu, Zhijun, Chen, Bin, Li, Run-Wei, Sun, Young, Jin, Kuijuan, Zhang, Yuheng, Chen, Hou-Tong, Ju, Sheng, Ruediger, Andreas, Shi, Daning, Borisevich, Albina Y., Yang, Hao
Controlling functionalities, such as magnetism or ferroelectricity, by means of oxygen vacancies (VO) is a key issue for the future development of transition metal oxides. Progress in this field is currently addressed through VO variations and their
Externí odkaz:
http://arxiv.org/abs/1708.08235
Autor:
El Mesoudy, Abdelouadoud, Lamri, Gwénaëlle, Dawant, Raphaël, Arias-Zapata, Javier, Gliech, Pierre, Beilliard, Yann, Ecoffey, Serge, Ruediger, Andreas, Alibart, Fabien, Drouin, Dominique
Publikováno v:
In Microelectronic Engineering 1 February 2022 255
Autor:
Hadj Youssef, Azza, Kolhatkar, Gitanjali, Amaechi, Ifeanyichukwu C., Katoch, Rajesh, González, Yoandris, Merlen, Alexandre, Ruediger, Andreas
Publikováno v:
In Applied Surface Science 30 December 2021 570