Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Röntgenlithographie"'
X-ray and ion projection lithography use membrane-based masks for the fabrication of microstructures with linewidths below 0.5 μm. To minimize pattern distortions during mask fabrication and under operating conditions, membranes with a high mechanic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2239d4f716b0a7dc66ecc95ba0712c31
https://publica.fraunhofer.de/handle/publica/182742
https://publica.fraunhofer.de/handle/publica/182742
Diamond is intensively under discussion as membrane material for X-ray masks. Its high optical transparency and its high thermal conductivity, its very low thermal expansion coefficient and its high Young's modulus favours diamond over other material
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3ef20e1f18468c3fc2729e3ba5f28a4
https://publica.fraunhofer.de/handle/publica/181161
https://publica.fraunhofer.de/handle/publica/181161
Autor:
A. Heuberger
X-ray lithography with wavelengths between 0.2 nm and 5 nm provides both high structural resolution as good as 0.1 μm and a wide scope of advantages for the application in circuit production. Examples for this better process performance compared to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3d487cf97e908b753f1ee07de6e3c5a
https://publica.fraunhofer.de/handle/publica/175439
https://publica.fraunhofer.de/handle/publica/175439
Waves passing material undergo generally a phase shift besides linear attenuation compared to waves passing the same path in vacuum. In X-ray lithography the phase shift of waves passing a typical absorber layer of an X-ray mask is some pi radians be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::9990ed058959295bc091113560174b90
https://publica.fraunhofer.de/handle/publica/175910
https://publica.fraunhofer.de/handle/publica/175910
Autor:
Pongratz, S.
Zur Herstellung von hochintegrierten Schaltkreisen in der Halbleiterlektronik mit extrem hohen Strukturaufloesungen von 0,5 mym und kleiner besitzt die Roentgenstrahllithographie die besten Aussichten, die derzeitigen optischen Lithographieverfahren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::efa097f445470404e984708cfa65aa24
https://publica.fraunhofer.de/handle/publica/176366
https://publica.fraunhofer.de/handle/publica/176366
Autor:
Trube, J., Huber, H.-L.
Die Roentgenlithographie ist ein Verfahren, beim dem per Schattenprojektion mit weichem Roentgenlicht (lambda ungefaehr 0.2-1.0 nm) Strukturen von einer Maske mit extremer Genauigkeit in einen roentgenempfindlichen Film uebertragen werden. Die Maske
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::23832fb0bd813de0f6aea8d45bc320c3
https://publica.fraunhofer.de/handle/publica/176376
https://publica.fraunhofer.de/handle/publica/176376
Absorbed X-ray photons generate electrons which influence the resolution in X-ray lithography. In this paper electrons released from the mask membrane, the resist and the sublayer are characterized experimentally. The effects of resist and target mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::eb59b030311886861a915c5efb3a2c13
https://publica.fraunhofer.de/handle/publica/175911
https://publica.fraunhofer.de/handle/publica/175911
MOSFETs with effective channel lengths down to 0.3 μm have been realized using x-ray lithography. To determine process parameters for device optimization two dimensional process and device modeling was employed. In addition, ring oscillators with di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::400731150730bef29819b8f8aa2995bd
https://publica.fraunhofer.de/handle/publica/175788
https://publica.fraunhofer.de/handle/publica/175788
The technological benefits of novolak-based two component resists may be incorporated into resists of higher sensitivity by making use of the concept of "chemical amplification". A respective resist formulation by Hoechst offers sensitivities of bett
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::02e456837b30d1b38e37d518a350e559
https://publica.fraunhofer.de/handle/publica/176153
https://publica.fraunhofer.de/handle/publica/176153