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Autor:
Martin Florovič, Róbert Szobolovszký, Jaroslav Kováč, Aleš Chvála, Jean-Claude Jacquet, Sylvain Laurent Delage
Publikováno v:
Journal of Electrical Engineering
GaN-based HEMTs’ high potential is deteriorated by self-heating during the operation, this has influence on the electrical properties as well as device reliability. This work is focused on an average channel temperature determination of power AlGaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc47588bbab1ba806fd3074614f2571d
