Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Rémy Charavel"'
Autor:
Patrick Bogaert, B. Vlachakis, A. Iline, Rémy Charavel, E. De Backer, K. Dhondt, M. Millecam, L. De Schepper, J. Ackaert, Jean-Pierre Raskin, Alexandru Vlad, E. Vandevelde
Publikováno v:
Microelectronics Reliability. 48:1553-1556
Metal-insulator-metal capacitor (MIMC) reliability and electrical properties are defined by the TDDB lifetime. breakdown voltage and leakage current. In this article, the correlation is determined between these electrical properties and the physical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b6f13fa3d099298aa806b89aa733ea6
https://doi.org/10.1016/j.microrel.2008.06.043
https://doi.org/10.1016/j.microrel.2008.06.043
Autor:
Jean-Pierre Raskin, Alexandru Vlad, J. Ackaert, Rémy Charavel, Pierre Bogaert, Anton Ilin, M. Millecam, K. Dhondt, Eddy Vandevelde, E. De Backer, B. Vlachakis, L. De Schepper
Publikováno v:
ECS Transactions. 13:83-90
Metal-Insulator-Metal Capacitor (MIMC) reliability and electrical properties are defined by the TDDB lifetime, breakdown voltage and leakage current. This article demonstrates the correlation between these electrical properties and the physical prope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54928ea007de4826db3d0c0f1b460997
https://doi.org/10.1149/1.2908620
https://doi.org/10.1149/1.2908620
Publikováno v:
Journal of Crystal Growth. 209:91-101
MgO{1 1 1} and {1 0 0} crystals are widely used as substrates for thin film growth, in many different areas of research such as superconductors, and other oxide, metal and nitride films, multilayers and superlattices. Since the quality of the thin fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::036b7565b44c8c6bc9d45f65b758585c
https://doi.org/10.1016/s0022-0248(99)00533-3
https://doi.org/10.1016/s0022-0248(99)00533-3
Autor:
Rémy Charavel, Jean-Pierre Raskin
Publikováno v:
AIP Conference Proceedings.
Ion implantation is the mostly used method for semiconductor doping but can also be of interest to change locally the etch rate of silicon and silicon dioxide. Indeed damages induced by ion implantation can increase the etch rate of silicon dioxide b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1940909173be28aa119a6d903f683187
https://doi.org/10.1063/1.2401523
https://doi.org/10.1063/1.2401523
Autor:
Rémy Charavel, Jean-Pierre Raskin
Publikováno v:
2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems.
A new process for self-aligned double gate MOS fabrication is proposed. The milestone of this process in the revelation of a buried mask in the BOX of a SOI wafer and in a thermal oxide layer on top of active silicon film. The revelation of the burie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::851f40c3c1eaeb724881f5cfaba076c7
https://doi.org/10.1109/nems.2006.334668
https://doi.org/10.1109/nems.2006.334668
Autor:
Jean-Pierre Raskin, Rémy Charavel
Publikováno v:
SPIE Proceedings.
Two methods to build submicronic self-aligned devices based on SOI MOS technology have been studied. The foreseen application of these techniques is the fabrication of self-aligned double gate SOI MOS transistors. Both of these methods make use of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbb7a9ac850a099601efdb6f90c8e2f8
https://doi.org/10.1117/12.572660
https://doi.org/10.1117/12.572660
Publikováno v:
SPIE Proceedings.
Boron highly doped silicon is now widely used as etch stop layer in MicroElectroMechanical Systems (MEMS) devices fabrication. The present paper shows the advantages of replacing the p++ Si etch stop layer by a p++ polysilicon layer. The etch rate of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5df4f52ed481e910a9ff3a9b28c5c8b
https://doi.org/10.1117/12.498107
https://doi.org/10.1117/12.498107
Publikováno v:
SPIE Proceedings.
The effects of various deposition and annealing conditions of Plasma Enhanced Chemical Vapour Deposited (PECVD) oxide films on residual stress, optical index, BHF etch rate, surface roughness for thick PECVD oxide films are investigated. Rapid Therma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0962601c310136dd08ce5ada2cf33d05
https://doi.org/10.1117/12.498098
https://doi.org/10.1117/12.498098
Publikováno v:
ECS Meeting Abstracts. :705-705
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30f676f1d3cd0c66c16fb465a3110958
https://doi.org/10.1149/ma2008-01/18/705
https://doi.org/10.1149/ma2008-01/18/705
Autor:
Rémy Charavel, Jean-Pierre Raskin
Publikováno v:
Electrochemical and Solid-State Letters. 9:G245
Increased etch rate for implanted oxide with boron, phosphorus, arsenic, and argon is characterized for aqueous and vapor hydrofluoric acid (HF). Destruction by implantation of Si-O bonds makes oxide more reactive to HF. Water being reaction product
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddbb4a978320604d4538ec2ef4ede007
https://doi.org/10.1149/1.2200307
https://doi.org/10.1149/1.2200307