Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Rémi Beneyton"'
Autor:
Richard Daubriac, Emmanuel Scheid, Hiba Rizk, Richard Monflier, Sylvain Joblot, Rémi Beneyton, Pablo Acosta Alba, Sébastien Kerdilès, Filadelfo Cristiano
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 1926-1939 (2018)
In this paper, we present an enhanced differential Hall effect measurement method (DHE) for ultrathin Si and SiGe layers for the investigation of dopant activation in the surface region with sub-nanometre resolution. In the case of SiGe, which consti
Externí odkaz:
https://doaj.org/article/beb5310ee07740d2b625e34f42a24125
Autor:
Christophe Morales, François Rieutord, Luciana Capello, H. Moriceau, Rémi Beneyton, Anne-Marie Charvet
Publikováno v:
ECS Transactions. 3:205-215
Wafer bonding can be viewed as an example of rough surface adhesion. We show that formalisms developed to describe rough surface adhesion can be rescaled to nanometer range and applied to silicon wafer bonding, with results that fit well with experim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7c7ffc44b1834827d7b58a764731c60
https://doi.org/10.1149/1.2357071
https://doi.org/10.1149/1.2357071
Publikováno v:
ECS Transactions. 3:239-248
Comparisons of various plasma assisted low temperature wafer bonding procedures have been conducted in order to carry out reliable void-free and high bonding strength. In this way, reactive ion etching (RIE), microwaves (MW) and inductive coupled pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a6dbaf2a7d217583067faf9e789c104
https://doi.org/10.1149/1.2357074
https://doi.org/10.1149/1.2357074
Publikováno v:
ECS Transactions. 3:139-146
For both hydrophilic and hydrophobic surface preparation, using the combination of advanced surface treatment and tuned annealing process, void free Si/Si direct bonding have been successfully obtained. The pre-bonding procedure involves only low tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2b9259f3bfca9a12c19e4ae79260a60
https://doi.org/10.1149/1.2357063
https://doi.org/10.1149/1.2357063
Autor:
Abdellaoui, Amélie
Publikováno v:
Micro et nanotechnologies/Microélectronique. UT3, 2022. Français. ⟨NNT : ⟩
National audience; Sensitive Ge-based sensors that convert infrared light in an electrical signal are developed at STMicroelectronics.For such applications, the current sequential integration flow need to be simplified toavoid tool contamination issu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4074::da3eba7d2e0179c972f5e175238de283
https://hal.laas.fr/tel-04121872/document
https://hal.laas.fr/tel-04121872/document
