Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Rémi, Demoulin"'
Infrared nanoplasmonic properties of hyperdoped embedded Si nanocrystals in the few electrons regime
Autor:
Meiling Zhang, Jean-Marie Poumirol, Nicolas Chery, Clément Majorel, Rémi Demoulin, Etienne Talbot, Hervé Rinnert, Christian Girard, Fuccio Cristiano, Peter R. Wiecha, Teresa Hungria, Vincent Paillard, Arnaud Arbouet, Béatrice Pécassou, Fabrice Gourbilleau, Caroline Bonafos
Publikováno v:
Nanophotonics
Nanophotonics, 2022, 2022, pp.0283. ⟨10.1515/nanoph-2022-0283⟩
Nanophotonics, 2022, 2022, pp.0283. ⟨10.1515/nanoph-2022-0283⟩
Using localized surface plasmon resonance (LSPR) as an optical probe we demonstrate the presence of free carriers in phosphorus doped silicon nanocrystals (SiNCs) embedded in a silica matrix. In small SiNCs, with radius ranging from 2.6 to 5.5 nm, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2173cb706aa4e416c47b5b49c86674a
https://doi.org/10.1515/nanoph-2022-0283
https://doi.org/10.1515/nanoph-2022-0283
Autor:
Meiling Zhang, Jean-Marie Poumirol, Nicolas Chery, Hervé Rinnert, Alaa E. Giba, Rémi Demoulin, Etienne Talbot, Fuccio Cristiano, Teresa Hungria, Vincent Paillard, Fabrice Gourbilleau, Caroline Bonafos
Publikováno v:
Nanoscale
Nanoscale, 2023, 15 (16), pp.7438-7449. ⟨10.1039/D3NR00035D⟩
Nanoscale, 2023, 15 (16), pp.7438-7449. ⟨10.1039/D3NR00035D⟩
International audience; Plasmonic hyperdoped Si nanocrystals embedded in silica synthesized via a combination of sequential low energy ion implantation and rapid thermal annealing. We show that phosphorus dopants are incorporated into the nanocrystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::732f3bdd587b50ef43297b829f105610
https://normandie-univ.hal.science/hal-04088288
https://normandie-univ.hal.science/hal-04088288
Autor:
Alix Valdenaire, Alaa Eldin Giba, Mathieu Stoffel, Xavier Devaux, Loïc Foussat, Jean-Marie Poumirol, Caroline Bonafos, Sonia Guehairia, Rémi Demoulin, Etienne Talbot, Michel Vergnat, Hervé Rinnert
Publikováno v:
ACS Applied Nano Materials
ACS Applied Nano Materials, 2023, ⟨10.1021/acsanm.2c05088⟩
ACS Applied Nano Materials, 2023, ⟨10.1021/acsanm.2c05088⟩
International audience; As building blocks of multifunctional materials involving coupling at the nanoscale, highly doped semiconductor nanocrystals are of great interest for potential applications in nanophotonics. In this work, we investigate the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d352ee96718f818e2d7ab6718d6f882
https://hal.science/hal-04003494/document
https://hal.science/hal-04003494/document
Autor:
Dongke Li, Jiaming Chen, Zhaoguo Xue, Teng Sun, Junnan Han, Wanghua Chen, Etienne Talbot, Rémi Demoulin, Wei Li, Jun Xu, Kunji Chen
Publikováno v:
Applied Surface Science
Applied Surface Science, 2023, 609, pp.155260. ⟨10.1016/j.apsusc.2022.155260⟩
Applied Surface Science, 2023, 609, pp.155260. ⟨10.1016/j.apsusc.2022.155260⟩
International audience; Understanding the distributions and behaviors of dopants in Si nanocrystal are the primary and necessary issues to realize the controllable doping at nanoscale and develop the next generation of optoelectronic devices. This wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f7c04418e56c2980b6b4cc4cd53a0db
https://normandie-univ.hal.science/hal-03853769/document
https://normandie-univ.hal.science/hal-03853769/document
Autor:
Dongke Li, Junnan Han, Teng Sun, Jiaming Chen, Etienne Talbot, Rémi Demoulin, Wanghua Chen, Xiaodong Pi, Jun Xu, Kunji Chen
Doping in Si nanocrystals is an interesting topic and to directly study the dopants distribution in phosphorous/boron co-doping circumstance is one of the important issue nowadays. In this study, atom probe tomography is performed to study the struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d67b18cb596d4e1b9a44ac001bd592f2
https://doi.org/10.2139/ssrn.4348342
https://doi.org/10.2139/ssrn.4348342
Autor:
Dima Sadek, Antoine Jay, Jihan El Hila, Quentin Gravelier, Alexandre Arnoult, Rémi Demoulin, Filadelfo Cristiano, Sébastien Plissard, Anne Hémeryck
Publikováno v:
Applied Surface Science
Applied Surface Science, 2023, 622, pp.156688. ⟨10.1016/j.apsusc.2023.156688⟩
Applied Surface Science, 2023, 622, pp.156688. ⟨10.1016/j.apsusc.2023.156688⟩
International audience; The integration of the BiSb topological insulator on GaAs is studied both experimentally and theoretically on (001) and (111)A surfaces. The molecular beam epitaxy of thin Bi0.9Sb0.1 layer on both substrates leads to the obser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a9053c6d1889f70d278e7a1cc692823
https://doi.org/10.1016/j.apsusc.2023.156688
https://doi.org/10.1016/j.apsusc.2023.156688
Autor:
Fatme, Trad, Alaa E, Giba, Xavier, Devaux, Mathieu, Stoffel, Denis, Zhigunov, Alexandre, Bouché, Sébastien, Geiskopf, Rémi, Demoulin, Philippe, Pareige, Etienne, Talbot, Michel, Vergnat, Hervé, Rinnert
Publikováno v:
Nanoscale. 13(46)
This work reports on the influence of phosphorous atoms on the phase separation process and optical properties of silicon nanocrystals (Si-NCs) embedded in phosphorus doped SiO/SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d8a3ea74c77ecd2ad665237a92d9a87a
https://pubmed.ncbi.nlm.nih.gov/34816268
https://pubmed.ncbi.nlm.nih.gov/34816268
Autor:
Michel Vergnat, Rémi Demoulin, Denis M. Zhigunov, Hervé Rinnert, Xavier Devaux, Philippe Pareige, Fatme Trad, Mathieu Stoffel, Etienne Talbot, Alexandre Bouché, Alaa E. Giba, Sebastien Geiskopf
Publikováno v:
Nanoscale
Nanoscale, 2021, ⟨10.1039/D1NR04765E⟩
Nanoscale, Royal Society of Chemistry, 2021, ⟨10.1039/D1NR04765E⟩
Nanoscale, 2021, ⟨10.1039/D1NR04765E⟩
Nanoscale, Royal Society of Chemistry, 2021, ⟨10.1039/D1NR04765E⟩
International audience; This work reports on the influence of phosphorous atoms on the phase separation process and optical properties of silicon nanocrystals (Si-NCs) embedded in phosphorus doped SiO/SiO 2 multilayers. Doped SiO/SiO 2 multilayers wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43b4097c50f21f0e3d1a5d230327d292
https://hal.science/hal-03457250/document
https://hal.science/hal-03457250/document
Autor:
Richard Daubriac, Rémi Demoulin, Sebastien Kerdiles, Pablo Acosta Alba, Jean-Michel Hartmann, Jean-Paul Barnes, Pawel Michałowski, Fransesca Chiodi, Etienne Talbot, Emmanuel Scheid, Antonino La Magna, Fuccio Cristiano
Publikováno v:
ECS Meeting Abstracts. :1279-1279
The CMOS scaling beyond 10 nm technology node requires high active dopant concentrations in source/drain modules to minimize contact resistance. Pulsed laser annealing has been targeted by chip manufacturers as a future option to enhance the activati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f0dbe5c7116cb028d761465fa991073
https://doi.org/10.1149/ma2022-01291279mtgabs
https://doi.org/10.1149/ma2022-01291279mtgabs
Autor:
Rémi Demoulin, Richard Daubriac, Sebastien Kerdiles, Pablo Acosta Alba, Jean-Michel Hartmann, Fransesca Chiodi, Emmanuel Scheid, Antonino La Magna, Fuccio Cristiano
Publikováno v:
ECS Meeting Abstracts. :1278-1278
Si1-xGex alloys took a major place in the microelectronic field because of their potential for MOSFETs devices. These last decades, the miniaturisation of these electronic devices allowed optimising their performances. However, this also highlighted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8817afdc3b4233dde949c573e44f6cd
https://doi.org/10.1149/ma2022-01291278mtgabs
https://doi.org/10.1149/ma2022-01291278mtgabs