Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Régis Meuret"'
Autor:
Christian Martin, Marwan Ali, Theo Penven, Régis Meuret, Charles Joubert, David Thomson, Maxime Semard
Publikováno v:
IEEE Transactions on Components Packaging and Manufacturing Technology Part B
IEEE Transactions on Components Packaging and Manufacturing Technology Part B, Institute of Electrical and Electronics Engineers (IEEE), 2018, pp.1-1. ⟨10.1109/TCPMT.2018.2874100⟩
IEEE Transactions on Components Packaging and Manufacturing Technology Part B, Institute of Electrical and Electronics Engineers (IEEE), 2018, pp.1-1. ⟨10.1109/TCPMT.2018.2874100⟩
International audience; In power electronic applications, due to switching components, the inverter dc-bus generates current pulses at low and high frequencies. Usually, a dc-bus capacitor is sized to absorb the current peaks at the switching frequen
Autor:
Jeremy Cuenot, Régis Meuret, Farid Meibody-Tabar, Babak Nahid-Mobarakeh, Eric Monmasson, Serge Pierfederici, Sami Zaim
Publikováno v:
IEEE Transactions on Transportation Electrification
IEEE Transactions on Transportation Electrification, Institute of Electrical and Electronics Engineers, 2017, 3 (4), pp.891-900. ⟨10.1109/TTE.2017.2738022⟩
IEEE Transactions on Transportation Electrification, Institute of Electrical and Electronics Engineers, 2017, 3 (4), pp.891-900. ⟨10.1109/TTE.2017.2738022⟩
International audience; In new generation of more electric aircrafts, dc-bus voltage is variable due to the variable speed generator. This implies constrains to design the actuator for the lowest dc voltage value. In case of permanent magnet synchron
The development of aviation is quite simply man’s desire to fly, the dream of Icarus to soar higher and higher. However, as soon as aviation became possible, the military quickly realized that aside from this romanticism the feat had other implicat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7527399b46c11c4bcbfaa9290b07aece
https://doi.org/10.1016/b978-1-78548-260-1.50003-0
https://doi.org/10.1016/b978-1-78548-260-1.50003-0
Publikováno v:
IEEE Transactions on Power Electronics. 29:2338-2344
Silicon carbide (SiC) power devices are the only commercialized components to run at high voltage and high temperature. Normally on junction field-effect transistors (JFETs) have lower on-state resistance and lower output capacitance than other SiC s
Autor:
Wissam Sabbah, Cyril Buttay, Régis Meuret, Hervé Morel, Dominique Planson, Amandine Masson, Raphaël Riva, Stephane Azzopardi
Publikováno v:
European Journal of Electrical Engineering
European Journal of Electrical Engineering, Lavoisier, 2013, 16 (3-4), pp.293-305. ⟨10.3166/ejee.16.293-305⟩
European Journal of Electrical Engineering, Lavoisier, 2013, 16 (3-4), pp.293-305. ⟨10.3166/ejee.16.293-305⟩
National audience; Silver sintering is a promising alternative to high melting point (HMP) solders which contain lead. Indeed, it offers better thermal and electrical properties, and can operate at higher temperature. Currently, several implementatio
Autor:
Farid Hamrani, Rene Escoffier, Eric Lorin, Benoit Thollin, Régis Meuret, Pierre-Olivier Jeannin, Laurent Mendizabal, Pierre Lefranc, Donatien Martineau, Johan Delaine, Zoubir Khatir, Laurent Quellec, Fadi Zaki, Clement Fita
Publikováno v:
2016 6th Electronic System-Integration Technology Conference (ESTC)
2016 6th Electronic System-Integration Technology Conference (ESTC), Sep 2016, Grenoble, France. pp.1-6, ⟨10.1109/ESTC.2016.7764473⟩
2016 6th Electronic System-Integration Technology Conference (ESTC), Sep 2016, Grenoble, France. pp.1-6, ⟨10.1109/ESTC.2016.7764473⟩
International audience; This paper presents the design of an inverter leg power module using GaN HEMT power components, and dedicated to aeronautical transports domain. This module has been designed collectively between industrial and academic partne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4794b780ba28aa73847ec063b928b410
https://hal.science/hal-04156066
https://hal.science/hal-04156066
Autor:
Régis Meuret, Kevin Loudiere, Christian Vollaire, Francois Costa, Houmam Moussa, Arnaud Breard
Publikováno v:
Proceedings of the 2016 IEEE International Symposium on Electromagnetic Compatibility
EMC
EMC, Jul 2016, Ottawa, ON, Canada. ⟨10.1109/ISEMC.2016.7571717⟩
EMC
EMC, Jul 2016, Ottawa, ON, Canada. ⟨10.1109/ISEMC.2016.7571717⟩
International audience; Predictive modelling of EMI is complex due to the large number of existing parameters and components. One of the relevant parameters is the temperature of semiconductors. This paper shows the influence of the temperature of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41d1fb38675df34363331e3e48b1be90
https://hal.archives-ouvertes.fr/hal-01388373
https://hal.archives-ouvertes.fr/hal-01388373
Autor:
Jérémy Cuenot, Sami Zaim, Serge Pierfederici, Eric Monmasson, Babak Nahid-Mobarakeh, Régis Meuret, Farid Meibody-Tabar
Publikováno v:
Symposium de Genie Electrique
Symposium de Genie Electrique, Jun 2016, Grenoble, France
HAL
Symposium de Genie Electrique, Jun 2016, Grenoble, France
HAL
International audience; Cet article montre l'intérêt qu'apporte la commande par platitude d'une Machine Synchrone à Aimants Permanents hautes vitesses, du fait d'un nombre réduit d'opérations de son algorithme. La compacité des machines hautes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b5826c5abe1fac22e49c68cd32986ce0
https://hal.archives-ouvertes.fr/hal-01361614/document
https://hal.archives-ouvertes.fr/hal-01361614/document
Publikováno v:
NAFEMS Americas Conference, The International Association for the Engineering Modeling, Analysis and Simulation Community
NAFEMS Americas Conference, The International Association for the Engineering Modeling, Analysis and Simulation Community, Jun 2016, Seattle, United States
HAL
NAFEMS Americas Conference, The International Association for the Engineering Modeling, Analysis and Simulation Community, Jun 2016, Seattle, United States
HAL
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::739e6d23872e6fa38f69aff036db2fd5
https://hal.archives-ouvertes.fr/hal-01671810
https://hal.archives-ouvertes.fr/hal-01671810
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2012:000154-000161
This paper presents a qualitative description of the punch-through mechanism in Silicon Carbide (SiC) JFET from Infineon/SiCED. A detailed one-dimensional analytical expression is derived for the current-voltage characteristic of the punch-through ef