Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Régis Bouyssou"'
Autor:
Bertrand Le Gratiet, Delphine Le Cunff, Laurent Bidault, Thomas Alcaire, Sébastien Desmaison, Régis Bouyssou
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cd09309154bf6c6ce121c30d9b19bfc
https://doi.org/10.1117/1.jmm.21.4.041603
https://doi.org/10.1117/1.jmm.21.4.041603
Autor:
Bertrand Le-Gratiet, Régis Bouyssou, Julien Ducoté, Florent Dettoni, Thibaut Bourguignon, Vincent Morin, Romain Bange, Nivea G. Schuch, Julien Nicoulaud, Guillaume Renault, Frederic Robert, Thiago Figueiro
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e771354a876eb3a8ff8efccf91f65df
https://doi.org/10.1117/12.2615199
https://doi.org/10.1117/12.2615199
Publikováno v:
ECS Transactions. 64:1-9
Si3N4 is widely used in the semiconductor industry as a sacrificial etch stop layer, implantation spacers, hard mask for selective epitaxy. Si3N4 is resistant to many RIE process, to fluoridric acid, and can be easily removed thanks to hot phosphoric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ec0806285c71ef76c33f9a9dbe4f96f
https://doi.org/10.1149/06439.0001ecst
https://doi.org/10.1149/06439.0001ecst