Zobrazeno 1 - 10
of 80
pro vyhledávání: '"R, de Reus"'
Publikováno v:
Sensors and Actuators A: Physical. :434-440
Bond strength and hermeticity of plasma activated bonded (PAB) Si-Si interfaces are reported. Bonding of 100 mm Si (100) wafers was performed. An average bond strength of 8–10 MPa was achieved without performing any annealing steps. Bonded cavities
Publikováno v:
Sensors and Actuators A: Physical. 92:223-228
Depth profiles of the sodium distribution at bonded interfaces of silicon wafers, bonded with an intermediate borosilicate glass film, are recorded by secondary ion mass spectrometry (SIMS). A layer of dielectric material is present under the thin la
Autor:
Peter Rasmussen, Karen Birkelund, R. de Reus, Ole Hansen, Steen Weichel, H Dirac, Salim Bouaidat
Publikováno v:
ResearcherID
Low-temperature anodic bonding to stoichiometric silicon nitride surfaces has been performed in the temperature range from 350°C to 400°C. It is shown that the bonding is improved considerably if the nitride surfaces are either oxidized or exposed
Publikováno v:
Physica C: Superconductivity. 199:112-120
Thin films of Bi 2 Sr 2 CaCu 2 O 8+δ have been fabricated by laser ablation on single crystal M g O (001), LaAlO 3 (001) and NdGaO 3 (001) substrates. The superconducting transition temperature T C0 is above 80 K with critical current densities of 4
Publikováno v:
Journal of Applied Physics. 71:3419-3426
The preferred orientation of YBa2Cu3O7 thin films grown on single‐crystal MgO(100) and SrTiO3(100) substrates has been investigated using x‐ray diffraction and transmission electron microscopy. Various types of microstructural defects were identi
Publikováno v:
Chinese Physics Letters. 8:525-528
Experimental evidences are presented to show the formation of nitride, Cu3N, in pure Cu sample by N-ion implantation. This result is obtained in the case of MeV ion implantation. Previous experiments showed that this compound can not be formed by N-i
Publikováno v:
Journal of Applied Physics. 70:3636-3646
The effective heat of formation (ΔH’) concept allows heats of formation to be calculated as a function of concentration. In this work the effective heat of formation rule is used to predict first phase formation in metal‐aluminum thin‐film sys
Autor:
J. Flokstra, W.A.M. Aarnink, Horst Rogalla, A. van Silfhout, David H.A. Blank, Derk Jan Adelerhof, R. de Reus
Publikováno v:
Applied surface science, 47(3), 195-203. Elsevier
Interdiffusion studies on high-Tc superconducting YBa2Cu3O7−δ thin films with thicknesses in the range of 2000–3000 A, on a Si(111) substrate with a buffer layer have been performed. The buffer layer consists of a 400 A thick epitaxial NiSi2 lay
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 53:24-34
Phase formation, stability, and mixing behavior in the metallic systems NiZr, FeZr, AuZr, and PdTa have been investigated under influence of high energy heavy ion beams as a function of temperature. Our results and data from the literatur
Publikováno v:
Nederlands tijdschrift voor geneeskunde. 151(51)
A 67-year-old woman developed a misidentification delusion after a right-sided frontally located recurrent convexity meningioma was removed by surgery. After antipsychotic therapy had been established, the patient recovered and the delusions disappea