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pro vyhledávání: '"R, Gleichmann"'
Autor:
R. Gleichmann, P. Gasirabo
Publikováno v:
Aktuelle Urologie. 42:55-57
INTRODUCTION: Anastomotic strictures are a known complication following a radical prostatectomy for prostate cancer. In rare cases there can be a complete displacement of the urethral anastomosis region. Treating this obstruction poses a technical ch
Autor:
R. Gleichmann, H. W. Wechsel
Publikováno v:
Aktuelle Urologie. 32:84-86
Autor:
R, Gleichmann, P, Gasirabo
Publikováno v:
Aktuelle Urologie. 42(1)
Anastomotic strictures are a known complication following a radical prostatectomy for prostate cancer. In rare cases there can be a complete displacement of the urethral anastomosis region. Treating this obstruction poses a technical challenge. Thera
Autor:
Peter R. Gleichmann
Publikováno v:
Theory, Culture & Society 9 (1992), Nr. 4
Building houses and cities is a part of our civilization. People are increasingly creating their own environment. To the extent they imbue that environment with meaning we have traditionally called it „architecture“ in many languages. The develop
Publikováno v:
Materials Science and Engineering: B. 10:197-207
The interrelationship between growth conditions, dislocation generation mechanisms and layer growth rate has been studied in InP/InP layers prepared by hydride vapour phase epitaxy. In the present experiments, only the PH3 flow rate was varied, where
Publikováno v:
Materials Science and Engineering: B. 9:115-119
Intentionally mismatched InxGa1−xAs/InP layers (0.49 ⪕ x ⪕ 0.74) were grown to study the relationship between layer composition and layer defects. The threading dislocations were present in quite a high density for x ⪆ 0.53 but absent for low
Publikováno v:
Materials Science Forum. :957-960
Publikováno v:
physica status solidi (a). 121:95-103
Scanning electron microscope investigations of cathodoluminescence (CL) are used to demonstrate the electrical homogeneity improvement of semi-insulating LEC GaAs by post growth annealing. Annealing conditions are varied in a broad temperature and ti
Publikováno v:
Philosophical Magazine A. 62:103-114
Transmission and scanning electron microscopy have been used to study mechanisms of hillock growth in InP homo-epitaxial layers grown by the hydride VPE technique. Stacking faults in conjunction with dislocations were found to be the main sources of