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pro vyhledávání: '"Quoc Duy Ho"'
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-6 (2021)
Abstract Using density functional theory (DFT), we performed theoretical investigation on structural, energetic, electronic, and magnetic properties of pure armchair silicene nanoribbons with edges terminated with hydrogen atoms (ASiNRs:H), and the a
Externí odkaz:
https://doaj.org/article/28bcbb63d0e44dc9ba83ccd4d8840ffb
Autor:
Hans Jürgen von Bardeleben, Shengqiang Zhou, Uwe Gerstmann, Dmitry Skachkov, Walter R. L. Lambrecht, Quoc Duy Ho, Peter Deák
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022521-022521-8 (2019)
Proton irradiation of both n-type and semi-insulating bulk samples of β-Ga2O3 leads to the formation of two paramagnetic defects with spin S = 1/2 and monoclinic point symmetry. Their high introduction rates indicate them to be primary irradiation i
Externí odkaz:
https://doaj.org/article/6cd53fa153374970b1268b2454698dd6
Publikováno v:
Molecular Simulation. 49:655-663
Autor:
Quoc Duy Ho, Eva Rauls
Publikováno v:
ChemistrySelect. 8
Autor:
Quoc Duy Ho, Martin Castillo
Publikováno v:
Computational Materials Science. 216:111827
Publikováno v:
Computational Condensed Matter. 32:e00727
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-6 (2021)
Scientific Reports
Scientific Reports
Using density functional theory (DFT), we performed theoretical investigation on structural, energetic, electronic, and magnetic properties of pure armchair silicene nanoribbons with edges terminated with hydrogen atoms (ASiNRs:H), and the absorption
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Publikováno v:
Oxide-based Materials and Devices X.
Autor:
Quoc Duy Ho, Hiroshi Abe, Nguyen Tien Son, Bo Monemar, Ken Goto, Yoshinao Kumagai, Thomas Frauenheim, Peter Deák, Takeshi Ohshima
Publikováno v:
Applied Physics Letters. 117:032101
Unintentionally doped n-type beta -Ga2O3 becomes highly resistive after annealing at high temperatures in oxygen ambient. The annealing process also induces an electron paramagnetic resonance (EPR) center, labeled IR1, with an electron spin of S=1/2