Reliability evaluation of IGCT from accelerated testing, quality monitoring and field return analysis

Autor: Stiasny, Th., Quittard, O., Waltisberg, Ch., Meier, U.

Publikováno v: In Microelectronics Reliability September 2018 88-90:510-513

Experimental Analysis of recombination and neutralization of radiation induced charges, using Isochronal Annealing

Autor: Quittard, O., Saigné, F., Joffre, F., Oudea, C., Dusseau, L., Fesquet, J., Gasiot, J.

Publikováno v: 5th European Conference on Radiation and its Effects on Components and Systems (RADECS1999)
5th European Conference on Radiation and its Effects on Components and Systems (RADECS1999), 1999, Fontevreau, France
IEEE-RADECS2000
IEEE-RADECS2000, 2000, Louvain La Neuve, Belgium

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::057625cbb2175902afdbacc85775583f
https://hal.archives-ouvertes.fr/hal-01803889

Experimental analysis of recombination and neutralization of radiation-induced charges, using isochronal annealing.

Autor: Quittard, O., Brisset, C., Joffre, F., Oudea, C., Saigne, F., Dusseau, L., Fesquet, J., Gasiot, J.

Publikováno v: 1999 Fifth European Conference on Radiation & Its Effects on Components & Systems RADECS 99 (Cat No99TH8471); 2000, p512-518, 7p

Use of commercial VDMOSFETs in electronic systems subjected to radiation.

Autor: Picard, C., Brisset, C., Quittard, O., Marceau, M., Hoffmann, A., Joffre, F., Charles, J.-P.

Publikováno v: 1999 Fifth European Conference on Radiation & Its Effects on Components & Systems RADECS 99 (Cat No99TH8471); 2000, p333-339, 7p

Prediction of long-term thermal behavior of an irradiated SRAM based on isochronal annealing measurements

Autor: Saigné, F., Quittard, O., Dusseau, L., Joffre, F., Oudéa, C., Fesquet, J., Gasiot, J.

Publikováno v: In Microelectronics Reliability 2002 42(3):459-461