Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Quat T. Vu"'
Publikováno v:
Solid-State Electronics. 34:271-278
The interfacial behavior between bilayers of aluminum and ruthernium dioxide deposited by (r.f.) magnetron sputtering has been studied after annealing at temperatures in the range 450°C–550°C for durations up to several hours by backscattering sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98e29d84abd79329e8b3ccb07b6ce2ea
https://doi.org/10.1016/0038-1101(91)90184-z
https://doi.org/10.1016/0038-1101(91)90184-z
Publikováno v:
Solid-State Electronics. 34:279-283
A transmission-line type model is developed for the four-point-probe measurement of multilayered structures. It is shown that the specific contact resistance between two layers can be extracted from this type of measurement without incurring the prob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28c1edf98d4da69ff9aa020708a78346
https://doi.org/10.1016/0038-1101(91)90185-2
https://doi.org/10.1016/0038-1101(91)90185-2
Publikováno v:
Journal of Applied Physics. 68:6420-6423
The oxidation behavior of reactively sputtered amorphous tungsten nitride of composition W80N20 was investigated in dry and wet oxidizing ambient in the temperature range of 450 °C–575 °C. A single WO3 oxide phase is observed. The growth of the o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30fc30122221b600f790c9c675c9fcae
https://doi.org/10.1063/1.346863
https://doi.org/10.1063/1.346863
Autor:
L.C. McIntyre, Quat T. Vu, K. W. Mitchell, M.-A. Nicolet, J.A. Leavitt, S. Raud, G. A. Pollock, M.D. Ashbaugh
Publikováno v:
MRS Proceedings. 187
We study the properties of CuInSe2 thin films grown on glass and on Mo substrates. The investigation is carried out with X-ray diffraction, RBS, XTEM and SEM.CuInSe2/Mo contact stability is investigated after annealing at 600°C. RBS reveals that thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e127fe134885571846be55ca0dd7c92
https://doi.org/10.1557/proc-187-101
https://doi.org/10.1557/proc-187-101
Publikováno v:
MRS Proceedings. 181
We have characterized the Al/RuO2 interface after annealing at temperatures in the range 450° C-550° C for durations up to several hours by backscattering spectrometry, cross-sectional transmission electron microscopy, and electrical four point pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::140d12af5d089f34bebb13182c21c482
https://doi.org/10.1557/proc-181-531
https://doi.org/10.1557/proc-181-531
Publikováno v:
MRS Proceedings. 181
Thin films of amorphous TiP and TiPN2 alloys were deposited by sputtering of a TiP target in an Ar and N2/Ar mixture, respectively. These alloy films were tested as diffusion barriers between Al and Si as well as between Cu and Si and also in metalli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb01d21f98d10bf5dc51583c96070855
https://doi.org/10.1557/proc-181-33
https://doi.org/10.1557/proc-181-33