Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Quanyang, Tao"'
Autor:
Xiaokun Yang, Rui He, Zheyi Lu, Yang Chen, Liting Liu, Donglin Lu, Likuan Ma, Quanyang Tao, Lingan Kong, Zhaojing Xiao, Songlong Liu, Zhiwei Li, Shuimei Ding, Xiao Liu, Yunxin Li, Yiliu Wang, Lei Liao, Yuan Liu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Vertical field effect transistor (VFET), in which the semiconductor is sandwiched between source/drain electrodes and the channel length is simply determined by the semiconductor thickness, has demonstrated promising potential for short chan
Externí odkaz:
https://doaj.org/article/db56dc617f354ee586a485b14f82bb5b
Autor:
Quanyang Tao, Ruixia Wu, Xuming Zou, Yang Chen, Wanying Li, Zheyi Lu, Likuan Ma, Lingan Kong, Donglin Lu, Xiaokun Yang, Wenjing Song, Wei Li, Liting Liu, Shuimei Ding, Xiao Liu, Xidong Duan, Lei Liao, Yuan Liu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-7 (2024)
Abstract Vertical transistors, in which the source and drain are aligned vertically and the current flow is normal to the wafer surface, have attracted considerable attention recently. However, the realization of high-density vertical transistors is
Externí odkaz:
https://doaj.org/article/2b376f5b70c0402dbf56eb9f9b7462cb
Autor:
Liting Liu, Yang Chen, Long Chen, Biao Xie, Guoli Li, Lingan Kong, Quanyang Tao, Zhiwei Li, Xiaokun Yang, Zheyi Lu, Likuan Ma, Donglin Lu, Xiangdong Yang, Yuan Liu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-7 (2024)
Abstract Two-dimensional (2D) semiconductors hold great promises for ultra-scaled transistors. In particular, the gate length of MoS2 transistor has been scaled to 1 nm and 0.3 nm using single wall carbon nanotube and graphene, respectively. However,
Externí odkaz:
https://doaj.org/article/cc72ab878cee422a8acaf98770c89b8d
Autor:
Zheyi Lu, Yang Chen, Weiqi Dang, Lingan Kong, Quanyang Tao, Likuan Ma, Donglin Lu, Liting Liu, Wanying Li, Zhiwei Li, Xiao Liu, Yiliu Wang, Xidong Duan, Lei Liao, Yuan Liu
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Abstract The practical application of two-dimensional (2D) semiconductors for high-performance electronics requires the integration with large-scale and high-quality dielectrics—which however have been challenging to deposit to date, owing to their
Externí odkaz:
https://doaj.org/article/c45e145e5ff74814a2f22b95b9a5e354
Autor:
Lingan Kong, Ruixia Wu, Yang Chen, Ying Huangfu, Liting Liu, Wei Li, Donglin Lu, Quanyang Tao, Wenjing Song, Wanying Li, Zheyi Lu, Xiao Liu, Yunxin Li, Zhiwei Li, Wei Tong, Shuimei Ding, Songlong Liu, Likuan Ma, Liwang Ren, Yiliu Wang, Lei Liao, Xidong Duan, Yuan Liu
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Laminated van der Waals (vdW) metallic electrodes can improve the contact of 2D electronic devices, but their scalability is usually limited by the transfer process. Here, the authors report a strategy to deposit vdW contacts onto various 2D and 3D s
Externí odkaz:
https://doaj.org/article/8f423baac9f44241b7e3d6e6190d8554
Autor:
Quanyang Tao, Ruixia Wu, Qianyuan Li, Lingan Kong, Yang Chen, Jiayang Jiang, Zheyi Lu, Bailing Li, Wanying Li, Zhiwei Li, Liting Liu, Xidong Duan, Lei Liao, Yuan Liu
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
Here, the authors report a method to fabricate reconfigurable electronic devices based on 2D materials by using polyvinyl alcohol as substrate. This technique enables repeatable disassembling and reassembling of van der Waals heterostructures with di
Externí odkaz:
https://doaj.org/article/d48077cd84274bb8aa154a504c2dc9a8
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
Designing high-performance photodetectors based on hybrid perovskites remains a challenge. Here, the authors demonstrate that Al2O3/2D perovskite heterostructure can be utilized as photoactive dielectric for high-performance MoS2 phototransistors wit
Externí odkaz:
https://doaj.org/article/12a8861024614daca1acf2f360761daf
Autor:
Lingan Kong, Xiaodong Zhang, Quanyang Tao, Mingliang Zhang, Weiqi Dang, Zhiwei Li, Liping Feng, Lei Liao, Xiangfeng Duan, Yuan Liu
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
One of the challenges hindering the control of 2D transistor polarity is the incompatibility with conventional ion-implantation doping approaches. Here, the authors report a doping-free strategy to obtain polarity control of WSe2 transistors using sa
Externí odkaz:
https://doaj.org/article/ca51fff043f84c29a431abd04f851ec5
Autor:
Zhiwei Li, Yawei Lv, Liwang Ren, Jia Li, Lingan Kong, Yujia Zeng, Quanyang Tao, Ruixia Wu, Huifang Ma, Bei Zhao, Di Wang, Weiqi Dang, Keqiu Chen, Lei Liao, Xidong Duan, Xiangfeng Duan, Yuan Liu
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
Strain engineering is a promising method to manipulate properties of two-dimensional (2D) materials but slippage between material and substrate makes strain transfer inefficient. Here the authors overcome slipping effects by encapsulating a 2D materi
Externí odkaz:
https://doaj.org/article/a4692fe73abb4502a04fc02b5498025b
Autor:
Ruixia Wu, Quanyang Tao, Jia Li, Wei Li, Yang Chen, Zheyi Lu, Zhiwen Shu, Bei Zhao, Huifang Ma, Zhengwei Zhang, Xiangdong Yang, Bo Li, Huigao Duan, Lei Liao, Yuan Liu, Xidong Duan, Xiangfeng Duan
Publikováno v:
Nature Electronics. 5:497-504
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e26159c88c891e6a12e1b73038b78768
https://doi.org/10.1038/s41928-022-00800-3
https://doi.org/10.1038/s41928-022-00800-3