Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Quanshan Lv"'
Autor:
Faguang Yan, Wenkai Zhu, Quanshan Lv, Kai Chang, Ce Hu, Z. H. Wang, Hailong Lin, Zhongming Wei, Kaiyou Wang
Publikováno v:
ACS Applied Materials & Interfaces. 12:43921-43926
The van der Waals (vdW) materials offer an opportunity to build all-two-dimensional (all-2D) spintronic devices with high-quality interfaces regardless of the lattice mismatch. Here, we report on an all-2D vertical spin valve that combines a typical
Publikováno v:
Advanced Materials Letters. 12:1-3
Autor:
Ce Hu, Dong H. Zhang, Kaiyou Wang, Zhongming Wei, Kai Chang, Faguang Yan, Quanshan Lv, Wenkai Zhu, Yucai Li
Publikováno v:
Science Bulletin. 65:1072-1077
Different than covalently bonded magnetic multilayer systems, high-quality interfaces without dangling bonds in van der Waals (vdW) junctions of two-dimensional (2D) layered magnetic materials offer opportunities to realize novel functionalities. Her
Publikováno v:
Advanced Materials Letters. 10:329-333
Autor:
Hailong, Lin, Faguang, Yan, Ce, Hu, Quanshan, Lv, Wenkai, Zhu, Ziao, Wang, Zhongming, Wei, Kai, Chang, Kaiyou, Wang
Publikováno v:
ACS applied materialsinterfaces. 12(39)
The van der Waals (vdW) materials offer an opportunity to build all-two-dimensional (all-2D) spintronic devices with high-quality interfaces regardless of the lattice mismatch. Here, we report on an all-2D vertical spin valve that combines a typical
Publikováno v:
Nanoscale. 9:8388-8392
We investigated electrical and photoelectrical properties of graphene sandwiched WSe2/GaSe van der Waals heterojunctions. The device showed a high rectification ratio up to 300 at Vds = 1.5/−1.5 V, which is attributed to the built-in electric field
Autor:
Quanshan Lv, Zakhar D. Kovalyuk, Wenkai Zhu, Nobuya Mori, Ce Hu, Kaiyou Wang, Amalia Patanè, Zakhar R. Kudrynskyi, Faguang Yan
Publikováno v:
Advanced Functional Materials
Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of de
Publikováno v:
Journal of Semiconductors. 40:092001
Two-dimensional (2D) atomic crystals, such as graphene, black phosphorus (BP) and transition metal dichalcogenides (TMDCs) are attractive for use in optoelectronic devices, due to their unique crystal structures and optical absorption properties. In
Publikováno v:
Nanoscale. 9(24)
We investigated electrical and photoelectrical properties of graphene sandwiched WSe
Transition metal dichalcogenides (TMDCs) have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorptions from visible to near infrared, but also can be s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8bbda602fad7203dc54be359b357ed75
http://arxiv.org/abs/1702.02260
http://arxiv.org/abs/1702.02260