Zobrazeno 1 - 10
of 105
pro vyhledávání: '"Quang-Ho Luc"'
Autor:
Huy-Binh Do, Quang-Ho Luc, Phuong V. Pham, Anh-Vu Phan-Gia, Thanh-Son Nguyen, Hoang-Minh Le, Maria Merlyne De Souza
Publikováno v:
Micromachines, Vol 14, Iss 8, p 1606 (2023)
By combining capacitance–voltage measurements, TCAD simulations, and X-ray photoelectron spectroscopy, the impact of the work function of the gate metals Ti, Mo, Pd, and Ni on the defects in bulk HfO2 and at the HfO2/InGaAs interfaces are studied.
Externí odkaz:
https://doaj.org/article/44729d41d32a416b92a72aaac0adbf46
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
Abstract A new method has been established and employed to create a random nanophotonic crystal (NPhC) structure without photolithography on the unpolished side of a single-side-polished sapphire substrate. This nano structure has potential use in en
Externí odkaz:
https://doaj.org/article/f48188cdb53f408098b75e890fe3a4f8
Autor:
Hua-Lun Ko, Quang Ho Luc, Ping Huang, Si-Meng Chen, Jing-Yuan Wu, Nhan-Ai Tran, Edward Yi Chang
Publikováno v:
IEEE Transactions on Electron Devices. 69:4183-4187
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c4116e512f6f351a8bf1ac308c1e3b6
https://doi.org/10.1109/ted.2022.3181572
https://doi.org/10.1109/ted.2022.3181572
Autor:
Hua-Lun Ko, Quang Ho Luc, Ping Huang, Si-Meng Chen, Jing-Yuan Wu, Che-Wei Hsu, Nhan-Ai Tran, Edward Yi Chang
Publikováno v:
IEEE Transactions on Electron Devices. 69:495-499
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d870c642848f9522a76678f619a125f2
https://doi.org/10.1109/ted.2021.3133222
https://doi.org/10.1109/ted.2021.3133222
Autor:
Hua-Lun Ko, Quang Ho Luc, Ping Huang, Jing-Yuan Wu, Si-Meng Chen, Nhan-Ai Tran, Heng-Tung Hsu, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society. 10:188-191
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51cf5b9481da748f70f0723ce7aee342
https://doi.org/10.1109/jeds.2022.3149954
https://doi.org/10.1109/jeds.2022.3149954
Autor:
Yan-Kui Liang, Jui-Sheng Wu, Edward Yi Chang, Chun-Jung Su, Hua-Lun Ko, Chun-Hsiung Lin, Chih-Yu Teng, Quang Ho Luc
Publikováno v:
IEEE Electron Device Letters. 42:1299-1302
In this letter, 5 nm-thick HZO ultra-thin ferroelectric capacitors with excellent remanent polarization ( $\text{P}_{\mathrm {r}}$ ) and reliability are presented. The TiN/HZO/TiN metal-ferroelectric-metal (MFM) capacitor stack was deposited consecut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e8439922a34b1ac1a0417bffc0f8e4d
https://doi.org/10.1109/led.2021.3102604
https://doi.org/10.1109/led.2021.3102604
Autor:
Min-Lu Kao, Ching-Ting Lee, Quang Ho Luc, Edward Yi Chang, Jui-Sheng Wu, Chih-Chieh Lee, Chih-Yi Yang, Chia-Hsun Wu, Daisuke Ueda, You-Chen Weng
Publikováno v:
IEEE Electron Device Letters. 42:1268-1271
A high-performance E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMT with an innovative source-connected field plate (SCFP) structure is reported for the first time. The optimized E-mode FEG-HEMT implements a novel SCFP structure, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d664166a15d21d9bc94772a6ed81976
https://doi.org/10.1109/led.2021.3098726
https://doi.org/10.1109/led.2021.3098726
Autor:
Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Tuan Anh Nguyen, Yueh Chin Lin, Edward Yi Chang
Publikováno v:
AIP Advances, Vol 7, Iss 8, Pp 085208-085208-6 (2017)
The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (
Externí odkaz:
https://doaj.org/article/3262fc6026cc426bb8e1522f86a41a17
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Jing-Yuan Wu, Ping Huang, Quang-Ho Luc, Hua-Lun Ko, Yung-Chun Chiang, Hsiang-Chan Yu, Nhan-Ai Tran, Mu-Yu Chen, Edward Yi Chang
Publikováno v:
Applied Physics Express. 16:041007
In this work, we present an inversion-mode In0.53Ga0.47As planar MOSFETs with current gain cutoff frequency (f T) = 275 GHz and maximum oscillation frequency (f max) = 75 GHz. To the best of our knowledge, this is the highest f T value among all the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32734fdd3f3bd425a50ba7197f64e133
https://doi.org/10.35848/1882-0786/acccd4
https://doi.org/10.35848/1882-0786/acccd4