Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Quanbin Zhou"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 902-907 (2019)
We demonstrate a method for testing the real off-state breakdown voltage (VBD) of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMTs) in on-wafer tests. The method prevents the arcing over air at high voltage by depo
Externí odkaz:
https://doaj.org/article/3aae6e3e424d499b93fe04dd56b55875
Publikováno v:
Micromachines, Vol 10, Iss 11, p 767 (2019)
In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to inves
Externí odkaz:
https://doaj.org/article/18772cfb68014fc4b86fbfdf856559a9
Publikováno v:
Applied Sciences, Vol 9, Iss 17, p 3458 (2019)
We demonstrate that the concave-convex circular composite structure sidewall prepared by inductively coupled plasma (ICP) etching is an effective approach to increase the light efficiency without deteriorating the electrical characteristics for micro
Externí odkaz:
https://doaj.org/article/5598489f688c4f2e84b5b2a1c8e72c53
Publikováno v:
Nanomaterials, Vol 9, Iss 3, p 403 (2019)
We fabricated an indium tin oxide (ITO)/Ga2O3/Ag/Ga2O3 multilayer as a transparent conductive electrode for ultraviolet light-emitting diodes (UV LEDs). The electrical and optical properties of the multilayer were improved by optimizing the annealing
Externí odkaz:
https://doaj.org/article/d59c4f47fc5a4fdca4f8a0f71b15eb33
Publikováno v:
Nanomaterials, Vol 9, Iss 1, p 66 (2019)
We fabricated a complex transparent conductive electrode (TCE) based on Ga2O3 for AlGaN-based ultraviolet light-emitting diodes. The complex TCE consists of a 10 nm ITO, a 15 nm Ga2O3, a 7 nm Ag, and a 15 nm Ga2O3, forming a ITO/Ga2O3/Ag/Ga2O3 multil
Externí odkaz:
https://doaj.org/article/3995243d789c4cffb97123e972887097
Publikováno v:
Nanomaterials, Vol 8, Iss 7, p 512 (2018)
We propose a graded indium composition p-type InGaN (p-InGaN) conduction layer to replace the p-type AlGaN electron blocking layer and a p-GaN layer in order to enhance the light output power of a GaN-based green light-emitting diode (LED). The indiu
Externí odkaz:
https://doaj.org/article/7527454247c644538c4c086cc1d9b776
Publikováno v:
IEEE Electron Device Letters. 42:481-484
We propose the Ti/Al/Ni/Ti ohmic contacts to improve the breakdown voltage (VBD) of GaN-based high electron mobility transistors (HEMTs). Using the same photolithography process, the first Ti/Al metal stack and the second Ni/Ti metal stack were achie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89bff65fbd17a139f9e8edac3bdcf219
https://doi.org/10.1109/led.2021.3058659
https://doi.org/10.1109/led.2021.3058659
Publikováno v:
IEEE Transactions on Electron Devices. 67:5427-5433
A comprehensive investigation on the low-field 2-DEG mobility in In x Al $_{{1}-{x}}\text{N}$ /AlN/GaN heterostructure has been made through Hall experimental and numerical calculation based on an ensemble Monte Carlo (MC) approach. Hall measurement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f726abcd5193e4192b5a4e20b674a789
https://doi.org/10.1109/ted.2020.3030567
https://doi.org/10.1109/ted.2020.3030567
Publikováno v:
IEEE Transactions on Electron Devices. 67:1959-1964
We proposed a preparation method of a TiN capping layer compatible with the ohmic contacts process, and demonstrated the Au-free ohmic contacts of an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) with a Ti/Al/Ni/TiN metal structure. TiN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deae3e2c9e96d4caac4ee6a23d5e2c25
https://doi.org/10.1109/ted.2020.2982665
https://doi.org/10.1109/ted.2020.2982665
Publikováno v:
IEEE Electron Device Letters. 40:1921-1924
We propose two kinds of stacked materials that effectively yield low drain off-state leakage current, high off-state breakdown voltage and low current collapse simultaneously in AlGaN/GaN HEMT. The two kinds of stacked materials, which is NiOX/SiNX a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbbad262b36bd11a90d9bf034befe62b
https://doi.org/10.1109/led.2019.2945175
https://doi.org/10.1109/led.2019.2945175