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pro vyhledávání: '"Quan H. Ngo"'
Autor:
Saad Monasa, M.I. Ishac, K. Augustine, T. Bressie, S.S. Saini, M. Szwarc, Sriram Balasubrahmanyam, Balaji Srinivasan, Hernan A. Castro, M. Dayley, Raymond W. Zeng, G. Vadlamudi, Christopher John Haid, Daniel Elmhurst, Karthikeyan Ramamurthi, Ahsanur Rahman, K. Loe, R.L. Melcher, S. Chandramouli, J.A. Kreifels, V. Viajedor, R.R. Nambiar, Quan H. Ngo, R. Rajagopal, T. Ly, M. Khandaker, A.T. Sayed, Bo Li, R. Padilla, F. Marvin, K. Fan, G. Christensen, Matthew Goldman, Bharat M. Pathak, I. Sharif, Rezaul Haque
Publikováno v:
2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302).
We describe the design of a high performance 2 bits per cell flash memory device capable of 8ns synchronous access rate capable of operation at up to 125MHz in burst mode and asynchronous page mode access rate of 14ns. The device is fabricated on Int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95c5f1b582416407897b2b7bd16530d1
https://doi.org/10.1109/vlsic.2002.1015111
https://doi.org/10.1109/vlsic.2002.1015111
