Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Qizhi Z. Liu"'
Autor:
Renata A. Camillo-Castillo, Qizhi Z. Liu, Vibhor Jain, James W. Adkisson, Marwan H. Khater, Peter Gray, John Jack Pekarik, R Malladi, D. L. Harame
Publikováno v:
ECS Meeting Abstracts. :1764-1764
Scaling silicon germanium heterojunction bipolar transistors (SiGe HBTs) to attain simultaneous increases in the figures of merit, fT and fMAX has necessitated a deep understanding of the inherent features of the process as it relates to the final de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab6d0184639e92b039b4a4e2f6cea01e
https://doi.org/10.1149/ma2014-02/35/1764
https://doi.org/10.1149/ma2014-02/35/1764
Publikováno v:
Fourth International Conference on Thin Film Physics and Applications.
Employing photoelastic effect with thermally stable and controllable metal stressor stripes for low propagation loss (on the order of 1 dB/cm) optical waveguide has been achieved in both InP and GaAs based planar waveguides. The study of stressors is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b42083cae9e61c19c3629909b098e3e
https://doi.org/10.1117/12.408417
https://doi.org/10.1117/12.408417
Autor:
Hans Zappe, S.A. Pappert, S. S. Lau, R.B. Welstand, Paul K. L. Yu, Z. F. Guan, Qizhi Z. Liu, Q. J. Xing, Hao Jiang, W.X. Chen
Publikováno v:
SPIE Proceedings.
Planar photoelastic effect on compound semiconductor structures has been investigated for integrated optical transmitter in rf photonics system. While our prior works emphasized the investigation of low-loss photoelastic waveguide, photoelastic waveg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3dda7dd1b6928937a638a534fdf7585
https://doi.org/10.1117/12.283937
https://doi.org/10.1117/12.283937
Autor:
Qizhi Z. Liu, Stephen A. Pappert, Richard Joseph Orazi, Paul K. L. Yu, S. S. Lau, R.B. Welstand
Publikováno v:
SPIE Proceedings.
Planar electroabsorption InP/InGaAsP waveguide modulators suitable for RF applications have been fabricated using the photoelastic effect. The planar device structure is achieved by using WNi thin film surface stressors for lateral waveguiding and he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e662c2d5df8b13e84a141f43fb32b2ac
https://doi.org/10.1117/12.259023
https://doi.org/10.1117/12.259023
Publikováno v:
MRS Proceedings. 379
Photoelastic optical waveguides using strain-compensated InAsP/InGaP multiplequantum-well (MQW) have been fabricated. Lateral light confinement for waveguiding is achieved by introducing stress into semiconductor heterostructures with stable WNi surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f75ddeb840dfb83a9d2a866c0d76499
https://doi.org/10.1557/proc-379-303
https://doi.org/10.1557/proc-379-303