Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Qiwen Kong"'
Autor:
Gong Zhang, Yue Chen, Zijie Zheng, Rui Shao, Jiuren Zhou, Zuopu Zhou, Leming Jiao, Jishen Zhang, Haibo Wang, Qiwen Kong, Chen Sun, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong
Publikováno v:
Light: Science & Applications, Vol 13, Iss 1, Pp 1-12 (2024)
Abstract To reduce system complexity and bridge the interface between electronic and photonic circuits, there is a high demand for a non-volatile memory that can be accessed both electrically and optically. However, practical solutions are still lack
Externí odkaz:
https://doaj.org/article/939064686e5c4c20a753b6d1f845cd61
Autor:
Qiwen Kong, Long Liu, Zijie Zheng, Chen Sun, Zuopu Zhou, Leming Jiao, Annie Kumar, Rui Shao, Jishen Zhang, Haiwen Xu, Yue Chen, Bich-Yen Nguyen, Xiao Gong
Publikováno v:
IEEE Transactions on Electron Devices. 70:2059-2066
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d9cfc37f1dac6ada972816db59928ee
https://doi.org/10.1109/ted.2023.3242852
https://doi.org/10.1109/ted.2023.3242852
Autor:
Chen Sun, Kaizhen Han, Subhranu Samanta, Qiwen Kong, Jishen Zhang, Haiwen Xu, Xinke Wang, Annie Kumar, Chengkuan Wang, Zijie Zheng, Xunzhao Yin, Kai Ni, Xiao Gong
Publikováno v:
IEEE Transactions on Electron Devices. 69:5262-5269
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75dae8b3f437c52d91648289c6eef19a
https://doi.org/10.1109/ted.2022.3188582
https://doi.org/10.1109/ted.2022.3188582
Publikováno v:
Environmental Science and Pollution Research. 29:89210-89220
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4512387d20c4c48c4dfe364909c8f45
https://doi.org/10.1007/s11356-022-22031-x
https://doi.org/10.1007/s11356-022-22031-x
Autor:
Gan Liu, Jiuren Zhou, Qiwen Kong, Gengchiau Liang, Leming Jiao, Sheng Luo, Xiaolin Wang, Z. H. Zhou, Zijie Zheng, Xiao Gong, Dong Zhang, Chen Sun
Publikováno v:
IEEE Electron Device Letters. 43:158-161
Overcoming the drawbacks of the existing ferroelectric tunnel junction (FTJ) models which ignore the dynamic or multi-domain switching behaviors, we develop a more comprehensive FTJ model by combining the Time-Dependent Landau-Ginzburg (TDLG) equatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04e1aaa25b4d76e1651dae09d0d0638e
https://doi.org/10.1109/led.2021.3128998
https://doi.org/10.1109/led.2021.3128998
Autor:
Jiuren Zhou, Annie Kumar, Chengkuan Wang, Zijie Zheng, Qiwen Kong, Jishen Zhang, Xiao Gong, Kaizhen Han, Haiwen Xu, Chen Sun, Subhranu Samanta
Publikováno v:
IEEE Electron Device Letters. 42:1786-1789
We report the temperature-dependent operation of back-end-of-line (BEOL) compatible amorphous indium-gallium-zinc-oxide ( ${a}$ -IGZO) ferroelectric thin-film transistors (FeTFTs) with a large memory window (MW) more than 3 V. Our ${a}$ -IGZO FeTFTs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe4b318c432ae79f4891ba8d7ad3b676
https://doi.org/10.1109/led.2021.3121677
https://doi.org/10.1109/led.2021.3121677
Autor:
Xiao Gong, Aaron Thean, Kaizhen Han, Jiuren Zhou, Qiwen Kong, Haiwen Xu, Chengkuan Wang, Yuye Kang, Haibo Wang, Chen Sun, Subhranu Samanta, Jishen Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 68:6610-6616
We report high-performance amorphous Indium-Gallium-Zinc-Oxide nanowire field-effect transistors (α -IGZO NW-FETs) featuring an ultrascaled nanowire width ( $W_{NW}$ ) down to ~20 nm. The device with 100 nm channel length ( $L_{CH}$ ) and ~25 nm $W_
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81a94506730976ec44a6b7c3e7e6f3b1
https://doi.org/10.1109/ted.2021.3113893
https://doi.org/10.1109/ted.2021.3113893
Autor:
Qiwen Kong, Gan Liu, Chen Sun, Zijie Zheng, Dong Zhang, Jishen Zhang, Haiwen Xu, Long Liu, Zuopu Zhou, Leming Jiao, Xiaolin Wang, Kaizhen Han, Yuye Kang, Bich-Yen Nguyen, Kai Ni, Xiao Gong
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cf74589ff9f771f0e3936eb195f4037
https://doi.org/10.1109/iedm45625.2022.10019394
https://doi.org/10.1109/iedm45625.2022.10019394
Autor:
Chen Sun, Xiaolin Wang, Haiwen Xu, Jishen Zhang, Zijie Zheng, Qiwen Kong, Yuye Kang, Kaizhen Han, Leming Jiao, Zuopu Zhou, Yue Chen, Dong Zhang, Gan Liu, Long Liu, Xiao Gong
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf328bc0bc7bd3f0c4c9041dbc3857ea
https://doi.org/10.1109/iedm45625.2022.10019526
https://doi.org/10.1109/iedm45625.2022.10019526
Autor:
Qiwen Kong, Long Liu, Zijie Zheng, Chen Sun, Annie Kumar, Rui Shao, Zuopu Zhou, Leming Jiao, Jishen Zhang, Haiwen Xu, Yue Chen, Gan Liu, Dong Zhang, Xiaolin Wang, Bich-Yen Nguyen, Xiao Gong
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::414cebfdb1e7feb592966fbad3146ab0
https://doi.org/10.1109/iedm45625.2022.10019480
https://doi.org/10.1109/iedm45625.2022.10019480