Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Qiushi Kang"'
Publikováno v:
Micromachines, Vol 14, Iss 5, p 991 (2023)
GaN-based micro-size light-emitting diodes (µLEDs) have a variety of attractive and distinctive advantages for display, visible-light communication (VLC), and other novel applications. The smaller size of LEDs affords them the benefits of enhanced c
Externí odkaz:
https://doaj.org/article/f3e0c0a3bc6e4f12b5a221474cab95c6
Publikováno v:
Micromachines, Vol 14, Iss 4, p 844 (2023)
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have great application prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to their advantages of energy conservation, environmental protection and ea
Externí odkaz:
https://doaj.org/article/f971ceaac0c14bcb868babac23babd6f
Publikováno v:
Journal of Materials Science & Technology. 149:161-166
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fab0cabc57661b475c1a98356f282ec
https://doi.org/10.1016/j.jmst.2022.12.012
https://doi.org/10.1016/j.jmst.2022.12.012
Publikováno v:
Lab on a Chip.
Establishment of fluorinated glass surfaces via a PTFE-assisted plasma modification strategy for room-temperature bonding of nanofluidic chips.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c45f833d57f3ccc84b49aade618a841d
https://doi.org/10.1039/d3lc00169e
https://doi.org/10.1039/d3lc00169e
Publikováno v:
2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2ca878d44459a1c71d154f5a83e9980
https://doi.org/10.1109/icta56932.2022.9963057
https://doi.org/10.1109/icta56932.2022.9963057
Publikováno v:
ACS Applied Materials & Interfaces. 13:38866-38876
Cu/SiO2 hybrid bonding with planarized dielectric and isolated metal connections can realize ultradense interconnects (e.g., ≤1 μm) by eliminating the microbumps and underfill through the direct bonding of Cu-Cu and SiO2-SiO2. However, the low-tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb58dcc29941c4070b1fb065433e5b3d
https://doi.org/10.1021/acsami.1c09796
https://doi.org/10.1021/acsami.1c09796
Publikováno v:
Ceramics International. 46:22718-22726
We propose a plasma-activated direct bonding process at low temperatures (≤200 °C) to form heterostructures between single-crystalline SiC and conventional Si-based substrates (SiO2, Si, and glass) without any interlayers. Surface activation was p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a748b801caf3f82b19b40b5328cedc3e
https://doi.org/10.1016/j.ceramint.2020.06.036
https://doi.org/10.1016/j.ceramint.2020.06.036
Autor:
Yanhong Tian, Qiushi Kang, Hui Fang, Dongsheng Yang, Te Wang, Chenxi Wang, Shicheng Zhou, Tadatomo Suga
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:6497-6505
Pressureless and low-temperature sintering of Ag paste has been mentioned as a promising strategy to solve the poor performance of large-area chips. In this paper, we develop a two-step surface activation process to achieve rapid pressureless and low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0612d36e4f76f2ca44325bc54f1ca96e
https://doi.org/10.1007/s10854-020-03207-y
https://doi.org/10.1007/s10854-020-03207-y
Publikováno v:
2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97b33fe0abc021a59118d7b5b1455250
https://doi.org/10.1109/icta53157.2021.9661731
https://doi.org/10.1109/icta53157.2021.9661731
Publikováno v:
2021 22nd International Conference on Electronic Packaging Technology (ICEPT).
Compared with continuous node scaling in a two-dimensional (2D) plane, advanced three-dimensional (3D) integration finds a new pathway to expand Moore's Law in the vertical direction. The essence of advanced 3D integration technology relies on the de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccf497bcee1beb9344b60101e4a772b7
https://doi.org/10.1109/icept52650.2021.9568007
https://doi.org/10.1109/icept52650.2021.9568007