Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Qiu-Ye Lv"'
Publikováno v:
Key Engineering Materials. :657-661
Aiming to be applied in silicon gyroscope, a three-order single loop feedforward modulator with three-bit quantizer and local feedback is designed in this paper. Signal band is 200 KHz, sampling rate is 25.6 MHz, OSR is 64. Ideal modulator is then de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37c34c85b3c071309b383e83cbdd37b1
https://doi.org/10.4028/www.scientific.net/kem.645-646.657
https://doi.org/10.4028/www.scientific.net/kem.645-646.657
Publikováno v:
Key Engineering Materials. :1266-1270
In this paper a high-order sigma-delta modulator applied in micro-accelerometer is designed. The modulator chooses the distributed feedback structure. And the signal bandwidth is 500Hz, the oversampling ratio is 250 and sampling frequency is 250KHz.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92ccf36f29af2359e83a840a289255a2
https://doi.org/10.4028/www.scientific.net/kem.609-610.1266
https://doi.org/10.4028/www.scientific.net/kem.609-610.1266
Publikováno v:
Key Engineering Materials. :1072-1076
In this Paper, a 4th-Order Low-Pass Gm-C Filter is Presented. for the Design of Operational Tranconductance Amplifier(OTA), it Adopts the Techniques of Current Division and Current Cancellation. these Techniques can Help to Achieve a Low Transconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::379dbe138fcc26a1413e80496ab0e2a0
https://doi.org/10.4028/www.scientific.net/kem.609-610.1072
https://doi.org/10.4028/www.scientific.net/kem.609-610.1072
Publikováno v:
Key Engineering Materials. :1117-1121
In this paper, the design of compensator to stabilize the micromachined accelerometer is considered based on stability analysis, and the determination of relevant parameter is also proposed. In the design of compensator, in order to minimize the nois
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::415f8e99be6a524bf943d8ec0bb5774f
https://doi.org/10.4028/www.scientific.net/kem.609-610.1117
https://doi.org/10.4028/www.scientific.net/kem.609-610.1117
Publikováno v:
Key Engineering Materials. :723-727
Sigma-delta ADC outperforms the Nyquist ADC in precision and robustness by using oversampling and noise shaping. A fourth-order sigma-delta modulator of input feedforward architecture is designed and simulated in system-level. Input feedforward archi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5fdd8b6b2060eaed03158b76eb6c05d
https://doi.org/10.4028/www.scientific.net/kem.609-610.723
https://doi.org/10.4028/www.scientific.net/kem.609-610.723
Publikováno v:
2016 International Conference on Integrated Circuits and Microsystems (ICICM).
In this paper, a novel structure named as quasidouble silicon-on-insulator metal-oxide-semiconductor transistor (SOI MOSFET) is proposed. Compared with the structure of normal SOI MOSFET, ultrathin oxide layers and p+ wells are added under the source
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5120ba41f83381a9d4714dfadbdde2bd
https://doi.org/10.1109/icam.2016.7813590
https://doi.org/10.1109/icam.2016.7813590
Publikováno v:
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
From the varying threshold voltage of MOSFET caused by the external factor, this paper analyzes the variation tendency of amplifier's gain. It makes clear how the gain of three different amplifiers changes in theoretical. After that, EDA tools are ut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ef70c3b044dc6bc4d1ef6cca8c4cd03
https://doi.org/10.1109/icsict.2016.7998719
https://doi.org/10.1109/icsict.2016.7998719
Publikováno v:
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
As a basic logic unit of integrated circuit, the stability of parameters of inverter have a direct effect on the performance of system. This paper starts from parametric drift of traditional inverter caused by the variation of threshold voltage of MO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc0b4078cfe86d0feed1cd74cd3dc1ce
https://doi.org/10.1109/icsict.2016.7998768
https://doi.org/10.1109/icsict.2016.7998768
Publikováno v:
Key Engineering Materials. :3128-3131
In: Eu: Fe: LiNbO3 crystals were firstly grown from a congruent melt according to the Czochralski method, with the various ratios of Li/Nb =0.885, 0.946, 1.051. The new crystal composition and defect structure were analyzed by the UV-Vis spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca150731f81011191ae209da66446c4d
https://doi.org/10.4028/www.scientific.net/kem.353-358.3128
https://doi.org/10.4028/www.scientific.net/kem.353-358.3128