Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Qiu Yan Hao"'
Publikováno v:
Materials; Volume 16; Issue 9; Pages: 3372
The development of stable and efficient electrocatalysts for oxygen evolution reaction is of great significance for electro-catalytic water splitting. Bimetallic layered double hydroxides (LDHs) are promising OER catalysts, in which NiCu LDH has exce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e38afa7abb91dbaf1ccecc251ffbbb14
https://doi.org/10.3390/ma16093372
https://doi.org/10.3390/ma16093372
Publikováno v:
Advanced Materials Research. 571:125-128
The yellow luminescence (YL) band in unintentional doped n-GaN irradiated by 10 MeV electrons has been investigated by means of photoluminescence (PL) spectroscopy. The YL intensity increased after electron irradiation and thermal annealing, indicati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c3ef3f84aa01e4806a5e4961b57a22f
https://doi.org/10.4028/www.scientific.net/amr.571.125
https://doi.org/10.4028/www.scientific.net/amr.571.125
Publikováno v:
Advanced Materials Research. 571:143-146
In this work, the preferential chemical etching of dislocations on (0001) sapphire surface was investigated. The sapphire was etched by fused KOH etchant at fixed temperature for different time. The differences in the morphology of the etch pits on c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aae6c6143405a0f6b1966ee32bde00da
https://doi.org/10.4028/www.scientific.net/amr.571.143
https://doi.org/10.4028/www.scientific.net/amr.571.143
Publikováno v:
Advanced Materials Research. 571:147-150
In this paper, the influence of reactor pressure on the quality of GaN epilayer grown by Hydride vapor phase epitaxy (HVPE) is reported. A series of sample was fabricated at 0.2, 0.5, 0.7 and 1 atm. There were several samples at certain pressure in o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98b5bb4f4d792081dd343106b3a245cd
https://doi.org/10.4028/www.scientific.net/amr.571.147
https://doi.org/10.4028/www.scientific.net/amr.571.147
Publikováno v:
Advanced Materials Research. 502:51-55
In order to understand dislocations in GaN grown on silicon using metal organic chemical vapor deposition (MOCVD), two samples with different film thickness were grown. The distribution of dislocations and its influence on epitaxial layer were studie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27e08304f78d361a9e28c6ae72260104
https://doi.org/10.4028/www.scientific.net/amr.502.51
https://doi.org/10.4028/www.scientific.net/amr.502.51
Publikováno v:
Advanced Materials Research. :587-590
Carbon impurity concentration and dislocation density were investigated with optical microscopy and Fourier transform infrared absorption spectrometer in radial direction of large diameter (6-inch) undoped semi-insulating Gallium Arsenide (SI-GaAs) g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1a039f290c8e7d3273f98575aca8d62
https://doi.org/10.4028/www.scientific.net/amr.472-475.587
https://doi.org/10.4028/www.scientific.net/amr.472-475.587
Publikováno v:
Advanced Materials Research. 427:115-118
Electron irradiation on silicon results in the creation of vacancy (V) and silicon self-interstitial (I).Vacancy tends to integrate with oxygen and forms the complexes of vacancy and oxygen (VmOn)such as VO, VO2, and VO3. These complexes of vacancy a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3700aa7ff4827d9b5707899f6fa54a58
https://doi.org/10.4028/www.scientific.net/amr.427.115
https://doi.org/10.4028/www.scientific.net/amr.427.115
Publikováno v:
Advanced Materials Research. :1323-1326
In order to investigate the performance of silicon single crystal depended on the annealing temperature, the minority carrier lifetime, the resistivity and oxygen concentration after different temperature annealing in Ar ambient were examined. And th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::095b26a24ee9e742283a7f34a997fbe7
https://doi.org/10.4028/www.scientific.net/amr.415-417.1323
https://doi.org/10.4028/www.scientific.net/amr.415-417.1323
Publikováno v:
Advanced Materials Research. :531-534
The dislocations in electron-irradiated c-plane n-GaN epitaxial layers grown on c-plane sapphire substrates by MOCVD were revealed by several different wet chemical etching methods. And the defect-selective etching method combined with SEM was carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac2e8dad2c5433fbdf412f2eda0a3c8c
https://doi.org/10.4028/www.scientific.net/amr.335-336.531
https://doi.org/10.4028/www.scientific.net/amr.335-336.531
Publikováno v:
Materials Science Forum. :1314-1317
GaN epilayers were grown on sapphire by metal-organic chemical vapor deposition (MOCVD), and the samples were annealed with rapid thermal processor (RTP) at 650, 750, 850 and 950oC, respectively. The effect of heat treatment on structural and optoele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e74b61995c5eefb8ba5c614370510ee
https://doi.org/10.4028/www.scientific.net/msf.663-665.1314
https://doi.org/10.4028/www.scientific.net/msf.663-665.1314