Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Qiu Yan Hao"'
Publikováno v:
Materials; Volume 16; Issue 9; Pages: 3372
The development of stable and efficient electrocatalysts for oxygen evolution reaction is of great significance for electro-catalytic water splitting. Bimetallic layered double hydroxides (LDHs) are promising OER catalysts, in which NiCu LDH has exce
Publikováno v:
Advanced Materials Research. 571:125-128
The yellow luminescence (YL) band in unintentional doped n-GaN irradiated by 10 MeV electrons has been investigated by means of photoluminescence (PL) spectroscopy. The YL intensity increased after electron irradiation and thermal annealing, indicati
Publikováno v:
Advanced Materials Research. 571:143-146
In this work, the preferential chemical etching of dislocations on (0001) sapphire surface was investigated. The sapphire was etched by fused KOH etchant at fixed temperature for different time. The differences in the morphology of the etch pits on c
Publikováno v:
Advanced Materials Research. 571:147-150
In this paper, the influence of reactor pressure on the quality of GaN epilayer grown by Hydride vapor phase epitaxy (HVPE) is reported. A series of sample was fabricated at 0.2, 0.5, 0.7 and 1 atm. There were several samples at certain pressure in o
Publikováno v:
Advanced Materials Research. 502:51-55
In order to understand dislocations in GaN grown on silicon using metal organic chemical vapor deposition (MOCVD), two samples with different film thickness were grown. The distribution of dislocations and its influence on epitaxial layer were studie
Publikováno v:
Advanced Materials Research. :587-590
Carbon impurity concentration and dislocation density were investigated with optical microscopy and Fourier transform infrared absorption spectrometer in radial direction of large diameter (6-inch) undoped semi-insulating Gallium Arsenide (SI-GaAs) g
Publikováno v:
Advanced Materials Research. 427:115-118
Electron irradiation on silicon results in the creation of vacancy (V) and silicon self-interstitial (I).Vacancy tends to integrate with oxygen and forms the complexes of vacancy and oxygen (VmOn)such as VO, VO2, and VO3. These complexes of vacancy a
Publikováno v:
Advanced Materials Research. :1323-1326
In order to investigate the performance of silicon single crystal depended on the annealing temperature, the minority carrier lifetime, the resistivity and oxygen concentration after different temperature annealing in Ar ambient were examined. And th
Publikováno v:
Advanced Materials Research. :531-534
The dislocations in electron-irradiated c-plane n-GaN epitaxial layers grown on c-plane sapphire substrates by MOCVD were revealed by several different wet chemical etching methods. And the defect-selective etching method combined with SEM was carrie
Publikováno v:
Materials Science Forum. :1314-1317
GaN epilayers were grown on sapphire by metal-organic chemical vapor deposition (MOCVD), and the samples were annealed with rapid thermal processor (RTP) at 650, 750, 850 and 950oC, respectively. The effect of heat treatment on structural and optoele