Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Qirong Yao"'
Publikováno v:
Advanced Science, Vol 11, Iss 3, Pp n/a-n/a (2024)
Abstract Here, the formation of type‐I and type‐II electronic junctions with or without any structural discontinuity along a well‐defined 1 nm‐wide 1D electronic channel within a van der Waals layer is reported. Scanning tunneling microscopy
Externí odkaz:
https://doaj.org/article/a84416821ad14cae88efcaa251b90e13
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 8, Iss 1, Pp 1952-1960 (2017)
We report a combined experimental and theoretical study of the growth of sub-monolayer amounts of silicon (Si) on molybdenum disulfide (MoS2). At room temperature and low deposition rates we have found compelling evidence that the deposited Si atoms
Externí odkaz:
https://doaj.org/article/b78eed152c354543a9f29a1270d6bff2
Publikováno v:
Nano Letters. 21:9699-9705
Although a few physical methods were demonstrated for domain wall engineering in various electronic or ferroic materials with broken discrete symmetries, the direct control over the electronic properties of individual domain walls has been extremely
Autor:
Julian Renner, Qirong Yao, Felix Börrnert, Ute Kaiser, Harold J.W. Zandvliet, Siegfried Eigler, Christof Neumann, Andrey Turchanin, Zhenping Wang
Publikováno v:
Angewandte Chemie, 132(32), 13760-13765. Wiley-VCH Verlag
Die thermische Zersetzung von Graphenoxid (GO) ist auf atomarer Ebene ein komplexer Prozess und noch nicht vollstandig verstanden. In dieser Untersuchung wurde eine Unterklasse von GO verwendet, oxofunktionalisiertes Graphen (oxo‐G), um die thermis
Publikováno v:
Physical review B: Covering condensed matter and materials physics, 103(16):165134. American Institute of Physics
Theory predicts that the application of an electric field breaks the inversion symmetry of AB and BA stacked domains in twisted bilayer graphene, resulting in the formation of a triangular network of one-dimensional valley-protected helical states. T
Publikováno v:
Phys. Rev. B
Physical Review B
Physical review B: Covering condensed matter and materials physics, 102(20):205419. American Institute of Physics
Physical Review B, 102, 1-6
Physical Review B, 102, 20, pp. 1-6
Physical Review B
Physical review B: Covering condensed matter and materials physics, 102(20):205419. American Institute of Physics
Physical Review B, 102, 1-6
Physical Review B, 102, 20, pp. 1-6
We have scrutinized the growth of germanium (Ge) on molybdenum disulfide (MoS2) using scanning tunneling microscopy and density functional theory calculations in order to resolve the still outstanding question whether Ge atoms prefer to intercalate b
Publikováno v:
Physica E: Low-Dimensional Systems and Nanostructures, 121:114113. Elsevier
The quantum state of matter of a two-dimensional Dirac material with a buckled honeycomb structure can be tuned by an electric field. In the absence of an external electric field the material is a topological insulator owing to the spin-orbit couplin
Publikováno v:
Chemistry : a European journal, 26(29), 6484-6489. Wiley-VCH Verlag
Chemistry (Weinheim an Der Bergstrasse, Germany)
Chemistry (Weinheim an Der Bergstrasse, Germany)
In recent years, graphene oxide has been considered as a soluble precursor of graphene for electronic applications. However, the performance lags behind that of graphene due to lattice defects. Here, the relation between the density of defects in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b3b245f8ac1310618318d8ff96ce321
https://research.utwente.nl/en/publications/3f88f5d0-1a3d-428e-a2d0-b8fe707a86d9
https://research.utwente.nl/en/publications/3f88f5d0-1a3d-428e-a2d0-b8fe707a86d9
Autor:
Pantelis Bampoulis, Kai Sotthewes, Rik van Bremen, Bene Poelsema, Henricus J.W. Zandvliet, Qirong Yao
Publikováno v:
ACS applied materials & interfaces, 9(22), 19278-19286. American Chemical Society
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces
Understanding the electronic contact between molybdenum disulfide (MoS2) and metal electrodes is vital for the realization of future MoS2-based electronic devices. Natural MoS2 has the drawback of a high density of both metal and sulfur defects and i
Autor:
Zhenping Wang, Siegfried Eigler, Julian Renner, Harold J.W. Zandvliet, Qirong Yao, Andrey Turchanin, Christof Neumann, Ute Kaiser, Felix Börrnert
Publikováno v:
Angewandte Chemie (International Ed. in English)
Angewandte Chemie-International Edition, 59(32), 13657-13662. Wiley
Angewandte Chemie-International Edition, 59(32), 13657-13662. Wiley
The thermal decomposition of graphene oxide (GO) is a complex process at the atomic level and not fully understood. Here, a subclass of GO, oxo‐functionalized graphene (oxo‐G), was used to study its thermal disproportionation. We present the impa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4a50177459a337c39fe5d059899ce993
https://refubium.fu-berlin.de/handle/fub188/27978
https://refubium.fu-berlin.de/handle/fub188/27978