Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Qingyang Yao"'
Autor:
Qingyang Yao, Huahua Xiong, Daxue Zhang, Shuqun Ren, Wenwei Qi, Xia Zou, Yingying Zhao, Shanshan Huang, Jing Wang, Liming Cao
Publikováno v:
Frontiers in Neurology, Vol 14 (2023)
BackgroundRight-to-left shunt (RLS) is associated with several conditions and causes morbidity. In this study, we aimed to evaluate the effectiveness of synchronous multimode ultrasonography in detecting RLS.MethodsWe prospectively enrolled 423 patie
Externí odkaz:
https://doaj.org/article/6871658b3f814fe1a9c84dca46e2ea83
Publikováno v:
BMC Neurology, Vol 22, Iss 1, Pp 1-7 (2022)
Abstract Background Progressive encephalomyelitis with rigidity and myoclonus (PERM) is an acute, potentially life-threatening, yet curable neuro-immunological disease characterized by spasms, muscular rigidity, and brainstem and autonomic dysfunctio
Externí odkaz:
https://doaj.org/article/f2be3a97c769418482cf317498ec3e7c
Publikováno v:
Journal of Applied Physics; Jan2011, Vol. 109 Issue 2, p024503, 6p, 1 Diagram, 7 Graphs
Publikováno v:
IEEE Transactions on Electron Devices. 58:1076-1083
This paper presents an improved negative differential mobility model for GaN and AlGaN to simulate GaN Gunn diodes at terahertz frequencies. Temperature-dependent parameters vsat, Ec, α, δ, and γ are proposed to improve the accuracy of the mobilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c204fb7b0055d30bfe2f0d0024d4f848
https://doi.org/10.1109/ted.2011.2105269
https://doi.org/10.1109/ted.2011.2105269
Publikováno v:
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.
A comprehensive model for the electron mobility in AlGaN lattices-matched to GaN is developed. A large number of experimental and theoretical mobility data and the results of Monte Carlo transport simulations in previous literature have been evaluate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77dc769fedbf41921bb2c1f20616afcb
https://doi.org/10.1109/icsict.2010.5667486
https://doi.org/10.1109/icsict.2010.5667486
Publikováno v:
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.
The terahertz frequency GaN Gunn diodes with GaN and AlGaN electron launchers are investigated by using an improved NDM model of GaN. The simulations demonstrate that there exists a shift of the oscillation mode from dipole domain mode toward accumul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2da81b28e7e2b0855790909ee33fb3cf
https://doi.org/10.1109/icsict.2010.5667726
https://doi.org/10.1109/icsict.2010.5667726
Publikováno v:
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.
An improved analyticl model for the electron mobility in wurtzite ZnO is developed. The numerical results of Monte Carlo transport simulations in previous literature have been evaluated and referred as the basis for the model development. The improve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f53ff1c875a00e777eba06dab8ba260
https://doi.org/10.1109/icsict.2010.5667465
https://doi.org/10.1109/icsict.2010.5667465
Autor:
Qingyang, Yao, Xiaoyun, Yuan
Publikováno v:
2015 International Conference on Intelligent Transportation, Big Data & Smart City; 2015, p705-708, 4p
Publikováno v:
Journal of Applied Physics. 109:024503
The wurtzite AlGaN/GaN Gunn diode with tristep-graded Al composition AlGaN as hot electron injector is simulated by using an improved negative differential mobility model of GaN. The results show that the oscillation mode of Gunn diode gradually shif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c59d06d29f13af53747134729982397
https://doi.org/10.1063/1.3533984
https://doi.org/10.1063/1.3533984
Publikováno v:
2010 10th IEEE International Conference on Solid-State & Integrated Circuit Technology (ICSICT); 2010, p1862-1864, 3p