Zobrazeno 1 - 10
of 121
pro vyhledávání: '"Qingwen Song"'
Autor:
Lu Jin, Zhenhong Li, Zekun Liu, Bethany Richardson, Yan Zheng, Lulu Xu, Zhongda Chen, Heng Zhai, Hongdoo Kim, Qingwen Song, Pengfei Yue, Sheng Quan Xie, Kap Jin Kim, Yi Li
Publikováno v:
npj Flexible Electronics, Vol 6, Iss 1, Pp 1-10 (2022)
Abstract Multiple strain sensors are required to identify individual forces/stresses on human joints and recognize how they work together in order to determine the motion’s direction and trajectory. However, current sensors cannot detect and differ
Externí odkaz:
https://doaj.org/article/d934981854674d29b848b752c1312604
Autor:
Lize Qi, Chao Zhi, Jiaguang Meng, Yongzhen Wang, Yaming Liu, Qingwen Song, Qian Wu, Liang Wei, Yang Dai, Jing Zou, Menghe Miao, Lingjie Yu
Publikováno v:
Materials & Design, Vol 226, Iss , Pp 111645- (2023)
Externí odkaz:
https://doaj.org/article/7fe87bf74c8c4e8aa195f23d1ea51cf9
Autor:
Lize Qi, Chao Zhi, Jiaguang Meng, Yongzhen Wang, Yaming Liu, Qingwen Song, Qian Wu, Liang Wei, Yang Dai, Jing Zou, Menghe Miao, Lingjie Yu
Publikováno v:
Materials & Design, Vol 225, Iss , Pp 111484- (2023)
Crowded living conditions and increasingly severe noise problems necessitate the development of a low-thickness sound absorption material with remarkable sound absorption performance. Here, simple materials such as sodium alginate aerogel (SA) and po
Externí odkaz:
https://doaj.org/article/52a1af7cc7d9496b86ef526772ab09e2
Publikováno v:
IET Power Electronics, Vol 14, Iss 11, Pp 2021-2026 (2021)
Abstract In this paper, a novel silicon carbide (SiC) trench metal oxide semiconductor field effect transistor (MOSFET) with improved reverse recovery charge and switching energy loss is proposed and investigated utilising ISE‐TCAD simulations. The
Externí odkaz:
https://doaj.org/article/cd455fd5291645d08306205814c637f5
Publikováno v:
IEEE Access, Vol 8, Pp 104503-104510 (2020)
The effects of 5 MeV proton irradiation on ON-state characteristics of 1200 V 4H-SiC VDMOSFETs are investigated in this paper, and related mechanisms have been revealed by the analysis of their test structure of ohmic contacts, lateral nMOSFETs and M
Externí odkaz:
https://doaj.org/article/845ef0751fbc43eebea7c3dbe545fd03
Autor:
Hao Yuan, Chengsen Wang, Xiaoyan Tang, Qingwen Song, Yanjing He, Yimen Zhang, Yuming Zhang, Li Xiao, Liangyong Wang, Yong Wu
Publikováno v:
IEEE Access, Vol 8, Pp 93039-93047 (2020)
This paper reports the demonstration of a high performance 4H-SiC floating junction junction barrier Schottky (FJ_JBS) rectifier with a 30μm, 6×1015 cm-3-doped epitaxial layer. Extensive simulations have been performed to design, optimize and analy
Externí odkaz:
https://doaj.org/article/c1b684f17247422581f04327f7ec6d23
Autor:
Zeyulin Zhang, Yanshuang Ba, Dazheng Chen, Pengru Yan, Qingwen Song, Yuming Zhang, Weidong Zhu, Chunfu Zhang, Yue Hao
Publikováno v:
Applied Sciences, Vol 13, Iss 2, p 1112 (2023)
All-inorganic perovskites, with their low-cost, simple processes and superior heat stability, have become potential candidate materials for photodetectors (PDs). However, they have no representative responsivity in the deep-ultraviolet (UV) wavelengt
Externí odkaz:
https://doaj.org/article/cee77f91254a4ab4b5ede7dc37a400b6
Autor:
Dongxun Li, Yuming Zhang, Xiaoyan Tang, Yanjing He, Hao Yuan, Yifan Jia, Qingwen Song, Ming Zhang, Yimen Zhang
Publikováno v:
Nanomaterials, Vol 10, Iss 7, p 1332 (2020)
In this paper the effects of 5 MeV proton irradiation on nitrided SiO2/4H-SiC metal–oxide–semiconductor (MOS) capacitors are studied in detail and the related mechanisms are revealed. The density of interface states (Dit) is increased with the ir
Externí odkaz:
https://doaj.org/article/40fe544d05e74bacb72008279117ce7f
Publikováno v:
Nanomaterials, Vol 10, Iss 5, p 987 (2020)
In this study, the effects of disperse blue dye-sensitization on the photocatalytic properties of the Ag-N co-doped TiO2 nanoparticles loaded on polyethylene terephthalate (PET) filaments are investigated under visible light irradiation. The microstr
Externí odkaz:
https://doaj.org/article/f2cf993ef56a44959dd3d5f9a4b90cdb
Autor:
Keyu Liu, Xiaoyan Tang, Hao Yuan, Qingwen Song, Yancong Liu, Yu Zhou, Fengyu Du, Yuming Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 70:3196-3201