Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Qinglin Sai"'
Publikováno v:
AIP Advances, Vol 14, Iss 4, Pp 045244-045244-6 (2024)
Electrical properties, electronic defects, and photoluminescence (PL) of Nb-doped β-Ga2O3 crystals grown by the floating zone method have been studied in the temperature range from 10 to 350 K. The activation energies of shallow and deep traps were
Externí odkaz:
https://doaj.org/article/cf1d026fa5ff49738fa127c121cc1467
Autor:
Liuyan Li, Lingyu Wan, Changtai Xia, Qinglin Sai, Devki N. Talwar, Zhe Chuan Feng, Haoyue Liu, Jiang Jiang, Ping Li
Publikováno v:
Materials, Vol 16, Iss 12, p 4269 (2023)
The long-range crystallographic order and anisotropy in β-(AlxGa1−x)2O3 (x = 0.0, 0.06, 0.11, 0.17, 0.26) crystals, prepared by optical floating zone method with different Al composition, is systematically studied by spatial correlation model and
Externí odkaz:
https://doaj.org/article/1845f6fc6dcf4e36bf369b8091e81a61
Publikováno v:
Crystals, Vol 12, Iss 3, p 429 (2022)
In this paper, the effects of oxygen vacancy and gallium vacancy on the optical and scintillation properties of undoped β-Ga2O3 crystal and 2.5 mol % Al doped gallium oxide were investigated. For the undoped β-Ga2O3, the transmittance is improved a
Externí odkaz:
https://doaj.org/article/c04d7b1779aa4aa5b2b0a1ba8abe75b2
Autor:
Baizhong Li, Qiudi Chen, Peixiong Zhang, Ruifeng Tian, Lu Zhang, Qinglin Sai, Bin Wang, Mingyan Pan, Youchen Liu, Changtai Xia, Zhenqiang Chen, Hongji Qi
Publikováno v:
Crystals, Vol 11, Iss 12, p 1501 (2021)
β-Ga2O3 crystals have attracted great attention in the fields of photonics and photoelectronics because of their ultrawide band gap and high thermal conductivity. Here, a pure β-Ga2O3 crystal was successfully grown by the optical floating zone (OFZ
Externí odkaz:
https://doaj.org/article/d05b5e51f65a41fcabb6eb703fd92153
Autor:
Xianjian Long, Wenlong Niu, Lingyu Wan, Xian Chen, Huiyuan Cui, Qinglin Sai, Changtai Xia, Devki N. Talwar, Zhechuan Feng
Publikováno v:
Crystals, Vol 11, Iss 2, p 135 (2021)
Systemic investigations are performed to comprehend the structural, optical, and electrical characteristics of four niobium (Nb) doped β-Ga2O3 crystals (β-Ga2O3:Nb) grown by the optical floating zone (OFZ) method. All of the β-Ga2O3:Nb crystals re
Externí odkaz:
https://doaj.org/article/409b940dd1b9479196e43b522524664a
Publikováno v:
In Journal of Crystal Growth 15 June 2023 612
Autor:
Li, Liuyan Li, Lingyu Wan, Changtai Xia, Qinglin Sai, Devki N. Talwar, Zhe Chuan Feng, Haoyue Liu, Jiang Jiang, Ping
Publikováno v:
Materials; Volume 16; Issue 12; Pages: 4269
The long-range crystallographic order and anisotropy in β-(AlxGa1−x)2O3 (x = 0.0, 0.06, 0.11, 0.17, 0.26) crystals, prepared by optical floating zone method with different Al composition, is systematically studied by spatial correlation model and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::27485da116dfaaa14c0e8dc1cafab02d
Publikováno v:
CrystEngComm. 24:5588-5596
Strategy for realizing the tunability of the effective carrier concentration of β-Ga2O3 single crystals using V as a dopant.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f3a4c581f503a39588d1183fd945eb4
https://doi.org/10.1039/d2ce00418f
https://doi.org/10.1039/d2ce00418f
Publikováno v:
CrystEngComm.
Twins are the common defects in β-Ga2O3 crystals that affect the development of large single crystal substrates. To investigate the generation and development of twins, we grew a (100) oriented...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c47e9181887e3d8fe9b8c634736f3309
https://doi.org/10.1039/d3ce00249g
https://doi.org/10.1039/d3ce00249g
Publikováno v:
CrystEngComm. 23:6300-6306
A crack extending downward along the seed of a beta-gallium oxide (β-Ga2O3) crystal grown using the edge-defined film-fed growth (EFG) method severely affects the efficiency of crystal slicing. In this study, the influence of the crack on the struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9f27151116aa6ad2fd6243a9a5482ae
https://doi.org/10.1039/d1ce00576f
https://doi.org/10.1039/d1ce00576f