Výsledky vyhledávání - "Qing Chun Zhang"

Akademický článek

Non-Uniform Low-Light Face Image Enhancement Based on Dark Channel Prior and Image Uniform Posterior

Autor: Bo-Yu Zhang, Qing-Chun Zhang, Wen-Ying Zhang

Publikováno v: IEEE Access, Vol 12, Pp 85724-85734 (2024)

Non-uniform low-light images, characterized by complex lighting conditions, pose a significant challenge in image restoration and enhancement, particularly under backlit scenarios where the high-brightness background obscures the foreground informati

Externí odkaz: https://doaj.org/article/6baaf0faa8c34193ad9f6004eddb4346

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Akademický článek

Electronic properties of ZrO2 films fabricated via atomic layer deposition on 4H-SiC and Si substrates

Autor: Xi-Rui Wang, Yu-Xuan Zeng, Jie Zhang, Wei Huang, Hong-Ping Ma, Qing-Chun Zhang

Publikováno v: Materials Research Express, Vol 11, Iss 1, p 015902 (2024)

Being an important semiconductor material for high power applications, silicon carbide (SiC) faces the problems while used as a gate oxygen layer in traditional Si MOS devices. In view of this, an innovative approach was adopted in the present work t

Externí odkaz: https://doaj.org/article/b2f58bbdb9d943d79ce4ff421438caa3

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Akademický článek

Understanding and Mitigating Stress Memorization Technique of Induced Layout Dependencies for NMOS HKMG Device

Autor: Ying-Fei Wang, Qing-Chun Zhang, Ping Li, Xiao-Jing Su, Li-Song Dong, Rui Chen, Li-Bin Zhang, Tian-Yang Gai, Ya-Juan Su, Ya-Yi Wei, Tian Chun Ye

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 9, Pp 6-9 (2021)

For the first time, this research addresses the notable layout proximity effects induced by stress memorization technique in planer high-k/Metal gate NMOS device systematically, including width effect, different shallow trench spacing effect, and len

Externí odkaz: https://doaj.org/article/3269a09e61a045ebb74841b3612bc1ff

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Akademický článek

Influence of Rapid Thermal Annealing on the Characteristics of Sn-Doped Ga2O3 Films Fabricated Using Plasma-Enhanced Atomic Layer Deposition

Autor: Yi Shen, Hong-Ping Ma, Zhen-Yu Wang, Lin Gu, Jie Zhang, Ao Li, Ming-Yang Yang, Qing-Chun Zhang

Publikováno v: Crystals, Vol 13, Iss 2, p 301 (2023)

In this work, Sn-doped Ga2O3 films fabricated using plasma-enhanced atomic layer deposition were treated by rapid thermal annealing (RTA). The RTA influence on the chemical state, surface morphology, energy band alignment, and electrical properties o

Externí odkaz: https://doaj.org/article/13fe42e4878a491c80acd937c1eb7f5b

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Akademický článek

CHEMTAX analysis of phytoplankton assemblages revealed potential indicators for blooms of haptophyte Phaeocystis globosa

Autor: Jin-Xiu Wang, Fan-Zhou Kong, Hui-Xia Geng, Qing-Chun Zhang, Yong-Quan Yuan, Ren-Cheng Yu

Publikováno v: Ecological Indicators, Vol 131, Iss , Pp 108177- (2021)

Harmful algal blooms formed by the haptophyte Phaeocystis globosa have been recorded in the Beibu Gulf since 2011. In this study, the composition and variation of phytoplankton assemblages in the Beibu Gulf were studied during an intense bloom of P.

Externí odkaz: https://doaj.org/article/42764d88e5bf478b9136b222b5c90ddd

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Akademický článek

Atomic-Level Sn Doping Effect in Ga2O3 Films Using Plasma-Enhanced Atomic Layer Deposition

Autor: Yi Shen, Hong-Ping Ma, Lin Gu, Jie Zhang, Wei Huang, Jing-Tao Zhu, Qing-Chun Zhang

Publikováno v: Nanomaterials, Vol 12, Iss 23, p 4256 (2022)

In this work, the atomic level doping of Sn into Ga2O3 films was successfully deposited by using a plasma-enhanced atomic layer deposition method. Here, we systematically studied the changes in the chemical state, microstructure evolution, optical pr

Externí odkaz: https://doaj.org/article/1c9c8830817849f3b820caac619cd592

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