Zobrazeno 1 - 10
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pro vyhledávání: '"Qin Guo-Yi"'
Publikováno v:
In Transactions of Nonferrous Metals Society of China November 2014 24(11):3556-3561
Autor:
Qin Guo-Yi
Publikováno v:
Communications in Theoretical Physics. 42:609-618
Phonon modes of AlAs/GaAs/AlAs and GaAs/AlAs/metal Pb quantum-dot quantum wells (QDQW's) with the whole scale up to 90 A are calculated by using valence force field model (VFFM) based on group theory. Their optical frequency spectra are divided into
Autor:
Qin Guo-Yi
Publikováno v:
Communications in Theoretical Physics. 40:727-734
An improved valence force field model (VFFM) is suggested to calculate the phonon modes in both bulk specimens and quantum dots (QDs) of AlAs taking account of the effect of transverse effective charges (TCs) correctly. The resultant dispersions of A
Publikováno v:
Communications in Theoretical Physics. 38:91-98
Phonon modes in spherical Si quantum dots (QDs) with up to 7.9 nm in diameter are calculated by using the projection operators of the group theory into valence force field model. The phonons of dot modes in each of five irreducible representations (s
Publikováno v:
Communications in Theoretical Physics. 34:593-604
Based on the quantum confinement-luminescence center model, we focus on the relationship between the photoluminescence (PL) spectra and sizes of nanoscale silicon particles.We find that when there are two kinds of luminescence centers (LC) in the oxi
Akademický článek
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Akademický článek
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Publikováno v:
Acta Physica Sinica. 53:1236
Based on the quantum confinement-luminescence center model, the relation between the inner electric field (IEF) and the photoluminescence(PL) character is calculated. Results show that the IEF between nanosilicon and luminescence centers (LCs) can ha
Publikováno v:
Materials Science Forum; April 2015, Vol. 817 Issue: 1 p645-650, 6p
Publikováno v:
Materials Science Forum; March 2015, Vol. 815 Issue: 1 p656-660, 5p