Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Qimin Lin"'
Autor:
Xin Yan, Xiaomin Ren, Yanbin Luo, Bang Li, Xia Zhang, Qimin Lin, Qichao Lu, Jiahui Zheng, Mingqian Zhang, Wei Wei
Publikováno v:
Optics & Laser Technology. 116:322-327
We have designed high-speed ultra-compact all-optical NOT and AND gates operating at 1550 nm on silicon-on-insulator (SOI) by a multi-objetice particle swarm optimized inverse-design method. The two gates have a similar four-port structure based on a
Publikováno v:
Open Journal of Social Sciences. :77-83
Based on VAR model, this paper employs Granger causality test to analyze the interactive relationship between housing price and land price in Beijing. The main conclusions are as follows: 1) there is a positive co-integration relationship between hou
Autor:
Li-chun Tang, Qimin Lin
Publikováno v:
Open Journal of Statistics. :346-362
Quantitative stock selection has become a research hotspot in the field of investment decision. As the data mining technology becomes mature, quantitative stock selection has made great progress. From the perspective of value investment, this paper s
Autor:
Yanbin Luo, Xiaomin Ren, Jiahui Zheng, Xin Yan, Qingsheng Zeng, Mingqian Zhang, Qimin Lin, Qichao Lu, Bang Li, Xia Zhang
Publikováno v:
Journal of Vacuum Science & Technology B. 37:051202
Graphene/nanowire (NW) Schottky junctions have shown great potential in nanoscale photoelectric conversion devices. However, due to the relatively small difference in work functions, the graphene/NW junctions typically have a low Schottky barrier hei
Publikováno v:
Applied Physics Letters. 114:243106
InP nanowires are an important material for nanoscale electronic and optical devices. However, the crystal phase mixing and stacking faults severely degrade the device's performance. Here, we demonstrate high performance field-effect transistors and
Autor:
Jiahui Zheng, Qichao Lu, Peng Liu, Xiaomin Ren, Yanbin Luo, Qimin Lin, Wei Wei, Xin Yan, Bang Li, Xia Zhang
Publikováno v:
Nanotechnology. 29:464004
We demonstrate a nanowire (NW) phototransistor with synaptic behavior based on inherent persistent photoconductivity. The device is comprised of a single crystalline InAs NW, covered by a native indium oxide layer acting as the photogating layer (PGL
Autor:
Xin Yan, Qimin Lin, Wei Wei, Yanbin Luo, Wen Liu, Jiahui Zheng, Qichao Lu, Xiaomin Ren, Mingqian Zhang, Jinnan Zhang, Bang Li, Xia Zhang
Publikováno v:
Journal of Vacuum Science & Technology B. 36:051205
Here, the authors demonstrate that the performance of graphene/gallium arsenide nanowire photodetectors could be modulated by applying gate voltage on graphene. The current–voltage curves under illumination continuously shift downward when an incre
Autor:
Bang Li, Wei Wei, Xin Yan, Xia Zhang, Peng Liu, Yanbin Luo, Jiahui Zheng, Qichao Lu, Qimin Lin, Xiaomin Ren
Publikováno v:
Nanotechnology; 11/16/2018, Vol. 29 Issue 46, p1-1, 1p