Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Qimiao Chen"'
Autor:
Po‐Lun Yeh, Bo‐Rui Wu, Yi‐Wei Peng, Chen‐Wei Wu, Yue‐Tong Jheng, Kwang Hong Lee, Qimiao Chen, Chuan Seng Tan, Guo‐En Chang
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 11, Pp n/a-n/a (2023)
Abstract Ge‐on‐insulators (GOIs) have been extensively explored as a potential platform for electronic‐photonic integrated circuits (EPICs), enabling various emerging applications. Although an efficient electrically‐injected light source is h
Externí odkaz:
https://doaj.org/article/aace53555cbe4f968ae974570cb6a209
Autor:
Simon Chun Kiat Goh, Li Lynn Shiau, Lin Zhang, Bongkwon Son, Qimiao Chen, Jian Zhong, Salim Teddy, Chuan Seng Tan
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 2, Pp 1-11 (2021)
Germanium-tin (GeSn) is a CMOS-compatible group-IV material. Its growth, however, is plagued by the tendency of Sn segregation and the generation of defects within the GeSn layer when it is grown on the lattice-mismatched substrate. Thus far, thin Ge
Externí odkaz:
https://doaj.org/article/13ac621338174454b2ec8dbfb83f15a7
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-8 (2017)
Abstract We theoretically investigate highly tensile-strained Ge nanowires laterally on GaSb. Finite element method has been used to simulate the residual elastic strain in the Ge nanowire. The total energy increment including strain energy, surface
Externí odkaz:
https://doaj.org/article/2260259ae3b24157ad9e62ee08775562
Autor:
Soumava Ghosh, Kuan-Chih Lin, Cheng-Hsun Tsai, Harshvardhan Kumar, Qimiao Chen, Lin Zhang, Bongkwon Son, Chuan Seng Tan, Munho Kim, Bratati Mukhopadhyay, Guo-En Chang
Publikováno v:
Micromachines, Vol 11, Iss 9, p 795 (2020)
Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of the planar fabrication technique. In this article, we present the design, growth, and charac
Externí odkaz:
https://doaj.org/article/076c06f7b1934a2693e49d1ef2b7c35e
Publikováno v:
Nanomaterials, Vol 8, Iss 9, p 705 (2018)
InPBi thin film has shown ultra-broad room temperature photoluminescence, which is promising for applications in super-luminescent diodes (SLDs) but met problems with low light emission efficiency. In this paper, InPBi quantum dot (QD) is proposed to
Externí odkaz:
https://doaj.org/article/1d9bd935ad634b56aaa842ae9c17a610
Publikováno v:
AIP Advances, Vol 5, Iss 8, Pp 087103-087103-7 (2015)
Bi4Te3, as one of the phases of the binary Bi–Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrate
Externí odkaz:
https://doaj.org/article/45034ffed47546bc9611c0a5c2f08e6e
Publikováno v:
Ceramics International. 49:7180-7186
Low-dimensional nanostructured semiconductors are becoming the promising materials for the further high-performance nanophotonics, nanoelectronics, and quantum devices. To enable these applications, it requires an efficient methodology to control the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16c55850e07ca021c50bb20695da7766
https://doi.org/10.1016/j.ceramint.2021.11.245
https://doi.org/10.1016/j.ceramint.2021.11.245
Autor:
Qimiao Chen, Yongduck Jung, Hao Zhou, Shaoteng Wu, Xiao Gong, Yi-Chiau Huang, Kwang Hong Lee, Lin Zhang, Donguk Nam, Jian Liu, Jun-Wei Luo, Weijun Fan, Chuan Seng Tan
Publikováno v:
ACS Photonics.
An efficient monolithically integrated light source with complementary metal-oxide semiconductor (CMOS) compatibility remains the missing component to enable Si photonics for various applications. In particular, vertical-cavity-surface-emitting (VCSE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4ae65a7417b1ffafcba75ad26959a0e
https://doi.org/10.1021/acsphotonics.2c01934
https://doi.org/10.1021/acsphotonics.2c01934
Autor:
Shengqiang Xu, Chuan Seng Tan, Yi-Chiau Huang, Xiao Gong, Hao Zhou, Qimiao Chen, Lin Zhang, Yuhao Jin, Shaoteng Wu
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-9
Recently, high-performance GeSn photodiodes (PDs) with external light illuminated on the device's top surface have been demonstrated on various platforms. However, for image sensing systems with a focal-plane array (FPA), the front-illuminated sensor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0495a14853a0f18207acae2bd23680ad
https://doi.org/10.1109/jstqe.2021.3078894
https://doi.org/10.1109/jstqe.2021.3078894
High-sensitivity Ge/Si avalanche photodiodes (APDs) have recently gained attention for their application in sensing and optical communication due to their low cost and CMOS compatible process. However, compared to commercial III–V compound APDs, Ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a09ef90af0e275bdc276e26f2030d2c1
https://hdl.handle.net/10356/166601
https://hdl.handle.net/10356/166601
