Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Qiliang Ni"'
Publikováno v:
Applied Sciences, Vol 14, Iss 6, p 2400 (2024)
With the development of space detection technology, the detection of long-range dark and weak space targets has become an important issue in space detection. Cross-strip anode photon imaging detectors can detect weak light signals with extremely low
Externí odkaz:
https://doaj.org/article/9af5b11a3d3d475a9cc45d9a239f44b3
Autor:
Zhongzhi Jiang, Qiliang Ni
Publikováno v:
Applied Sciences, Vol 13, Iss 9, p 5798 (2023)
A cross strip (XS) anode detector is a photon-counting imaging detector with high spatial resolution. However, due to the Poisson distribution characteristics of the photons emitted by the target, photons with a small time interval will cause signal
Externí odkaz:
https://doaj.org/article/b1dc6e43124f43f9a6ac5f403270e070
Autor:
Yuqi Sun, Xiaotian Li, Jiri Galantu, Qihang Chu, Jun Chen, Fuguan Li, Nan Song, Geng Wang, Qiliang Ni
Publikováno v:
Applied Sciences, Vol 13, Iss 2, p 967 (2023)
This paper introduces an echelle grating spatial heterodyne terahertz Raman spectrometer (E-SHTRS) that combines echelle gratings with spatial heterodyne terahertz Raman spectroscopy technology by replacing the gratings on the interference arms with
Externí odkaz:
https://doaj.org/article/ce6f29a11111400bab3bd672605de2e3
Autor:
Zhongzhi Jiang, Qiliang Ni
Publikováno v:
Applied Sciences, Vol 12, Iss 17, p 8471 (2022)
Imaging detectors based on a microchannel plate (MCP) and charge division anode with charge induction have broad applications in particles (photons, neutrons, ions, and electrons) detection. However, the application of a charge induction readout mode
Externí odkaz:
https://doaj.org/article/d2b583765fc549aebb9986a2ca13ca9e
Publikováno v:
2022 China Semiconductor Technology International Conference (CSTIC).
Publikováno v:
2022 China Semiconductor Technology International Conference (CSTIC).
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
The hillock on top metal (Cu wire) of logic wafer will cause Cu diffuse and lead to interconnect failure in the UTS CIS device manufacturing. A graphics analysis method was used to study the hillock size and density affected by the film thermal stres
Publikováno v:
2021 China Semiconductor Technology International Conference (CSTIC).
After tungsten contact CMP, Ti residue defect was found, and as defect count increased, CP fail bin count also increased. After the deposition of the M2 NDC film, VC inspection with negative charging mode was used to scan, and the DVC defect of the r
Publikováno v:
2021 China Semiconductor Technology International Conference (CSTIC).
In 19nm Flash memory process, the aspect ratio of shallow trench isolation (STI) become large and it gets difficult to fill STI Oxide by conventional CVD film. Perhydro-Polysilazance (PSZ) deposition process because of its good filling ability has be
Autor:
Qiliang Ni, Ruojia Xu, Fu Hao, Zhengying Wei, Chen Li, Xu Chen, Yunwei Ding, Pan Tian, Yu Xueru, Rui Sun
Publikováno v:
2021 China Semiconductor Technology International Conference (CSTIC).
Wafer defect classification is essential in semiconductor manufacturing for fast response of equipment and process stability monitoring, it is also critical for product yield management. Manual defect classification is time-consuming and prone to err