Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Qide Yao"'
Autor:
Qide Yao, Xueli Ma, Hanxiang Wang, Yanrong Wang, Guilei Wang, Jing Zhang, Wenkai Liu, Xiaolei Wang, Jiang Yan, Yongliang Li, Wenwu Wang
Publikováno v:
Nanomaterials, Vol 11, Iss 4, p 955 (2021)
The interface passivation of the HfO2/Si0.7Ge0.3 stack is systematically investigated based on low-temperature ozone oxidation and Si-cap methods. Compared with the Al2O3/Si0.7Ge0.3 stack, the dispersive feature and interface state density (Dit) of t
Externí odkaz:
https://doaj.org/article/f88ac2c5fa2d46e59d12b503a353eb2a
Autor:
Yanrong Wang, Yongliang Li, Xiaohong Cheng, Hanxiang Wang, Qide Yao, Jing Zhang, Wenkai Liu, Guilei Wang, Jiang Yan, Wenwu Wang
Publikováno v:
Materials Research Express, Vol 8, Iss 9, p 095007 (2021)
The effect of As ion implantation on the stability of SiGe/Si multilayer was systematically studied. The atomic percentage of Ge in as-grown SiGe layer was 30% in this work. A thermally stable Si _0.7 Ge _0.3 /Si multilayer with As ion implantation w
Externí odkaz:
https://doaj.org/article/8c0e63ab9a9549889ac0f9b3a36ebed9
Autor:
Yajuan Su, Fei Zhao, Tianchun Ye, Li Junjie, Luo Yanna, Xiaolei Wang, Huaxiang Yin, Dan Zhang, Hong Yang, Wei Yayi, Anyan Du, Wang Wenwu, Yongliang Li, Hao Chang, Qide Yao, Su Xiaojing, Tao Yang, Xueli Ma, Hao Xu, Junfeng Li, Xiaobin He, Zhenhua Wu, Huilong Zhu, Jun Luo
Publikováno v:
Tsinghua Science and Technology. 27:534-558
This article reviews advanced process and electron device technology of integrated circuits, including recent featuring progress and potential solutions for future development. In 5 years, for pushing the performance of fin field-effect transistors (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4d1c46ed2744f7178b4d7c513416a35
https://doi.org/10.26599/tst.2021.9010049
https://doi.org/10.26599/tst.2021.9010049
Publikováno v:
Semiconductor Science and Technology. 37:125008
In this paper, the optimization of SiGe interface properties for the SiGe channel fin field effect transistor (FinFET) transistor is explored in detail. First, optimal low-temperature ozone oxidation at 300 °C for 30 min was confirmed based on Al2O3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef15bcdc1c4b66e863cf5128cfd97d07
https://doi.org/10.1088/1361-6641/ac99f7
https://doi.org/10.1088/1361-6641/ac99f7
Autor:
Jing Zhang, Qide Yao, Guilei Wang, Jiang Yan, Yanrong Wang, Hanxiang Wang, Yongliang Li, Xiaolei Wang, Wenwu Wang, Xueli Ma, Wenkai Liu
Publikováno v:
Nanomaterials, Vol 11, Iss 955, p 955 (2021)
Nanomaterials
Volume 11
Issue 4
Nanomaterials
Volume 11
Issue 4
The interface passivation of the HfO2/Si0.7Ge0.3 stack is systematically investigated based on low-temperature ozone oxidation and Si-cap methods. Compared with the Al2O3/Si0.7Ge0.3 stack, the dispersive feature and interface state density (Dit) of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abe13aa72fd92e0006fc66730884d8c8
https://www.mdpi.com/2079-4991/11/4/955
https://www.mdpi.com/2079-4991/11/4/955
Autor:
Wenkai Liu, Wenwu Wang, Jing Zhang, Cheng Xiaohong, Qide Yao, Hanxiang Wang, Yanrong Wang, Guilei Wang, Yongliang Li, Jiang Yan
Publikováno v:
Materials Research Express. 8:095007
The effect of As ion implantation on the stability of SiGe/Si multilayer was systematically studied. The atomic percentage of Ge in as-grown SiGe layer was 30% in this work. A thermally stable Si0.7Ge0.3/Si multilayer with As ion implantation was att
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60b76f41b820f940305e552cf0317873
https://doi.org/10.1088/2053-1591/ac08ce
https://doi.org/10.1088/2053-1591/ac08ce