Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Qiaonan Yin"'
Publikováno v:
AIP Advances, Vol 4, Iss 5, Pp 057106-057106-6 (2014)
In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001) SrTiO3 substrate by pulsed laser deposition method. Combining piezoresponse force and conductive-tip atomic force microscopy, we demonstrate robust a
Externí odkaz:
https://doaj.org/article/b3a370bd310745c98cc2d698fceeb84b
Publikováno v:
Applied Physics A. 122
In this work, we theoretically investigate the size dependence of the heat process in thermochemical filamentary resistive switching memories of crossbar structure. The equivalent heat resistance of the system increases with the device dimensions sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6338b5b7ce59a6c7aacbe99d70fa134
https://doi.org/10.1007/s00339-016-9873-5
https://doi.org/10.1007/s00339-016-9873-5
Publikováno v:
Scientific Reports
The accurate calculation of decimal fractions is still a challenge for the binary-coded computations that rely on von Neumann paradigm. Here, we report a kind of memristive abacus based on synaptic Ag-Ge-Se device, in which the memristive long-term p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06c84bf9695f72f1d8554673d86e2a04
Polarity-dependent effect of humidity on the resistive switching characteristics of nonpolar devices
Publikováno v:
Applied Physics Express. 9:104202
The roles of moisture in resistive switching (RS) devices are closely related to the RS mechanism. In principle, the nonpolar RS promises symmetric behaviors independent of the polarities of operating voltages. However, the effect of humidity on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b74e46f2bb6a47a0d591387104c8949
https://doi.org/10.7567/apex.9.104202
https://doi.org/10.7567/apex.9.104202
Publikováno v:
Journal of Physics D: Applied Physics. 49:09LT01
H2 production has been predicted in some metal–insulator–metal resistive switching devices and similar structures, but experimentally has not yet been reported. Here we discovered cathode bubbles in Pt/TiO2−x /Pt unipolar resistive switching ce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8108e6a9a1dc12979c26f8e75a80fe3b
https://doi.org/10.1088/0022-3727/49/9/09lt01
https://doi.org/10.1088/0022-3727/49/9/09lt01
Publikováno v:
AIP Advances, Vol 4, Iss 5, Pp 057106-057106-6 (2014)
In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001) SrTiO3 substrate by pulsed laser deposition method. Combining piezoresponse force and conductive-tip atomic force microscopy, we demonstrate robust a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a95867058fa0b87d855cbf57150b7cc3
https://doaj.org/article/b3a370bd310745c98cc2d698fceeb84b
https://doaj.org/article/b3a370bd310745c98cc2d698fceeb84b
Autor:
Changjie Gong, Yan Lei, Bo Xu, Jiang Yin, Xuexin Lan, Yidong Xia, Xin Ou, Zhiguo Liu, Qiaonan Yin
Publikováno v:
Applied Physics Letters. 103:192905
An effective method to generate traps at the interface was developed to enhance the charge trapping capability of HfO2/Al2O3 multilayered memory devices. A high charge density was obtained in the inter-diffusion layer in which additional trap sites c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e837307aa99069a0c87bf82d9d05d48d
https://doi.org/10.1063/1.4829066
https://doi.org/10.1063/1.4829066
Publikováno v:
Chinese Physics Letters. 30:058101
GeTe4 films are deposited by using a dc magnetron sputtering technique, and its structural, thermal and electrical properties are investigated systematically. The prototypical phase-change memory cells are fabricated by using a focused ion beam and m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68a3dc6941498609e27ecf0e79bda608
https://doi.org/10.1088/0256-307x/30/5/058101
https://doi.org/10.1088/0256-307x/30/5/058101
Autor:
Changjie Gong, Qiaonan Yin, Xin Ou, Xuexin Lan, Jinqiu Liu, Chong Sun, Laiguo Wang, Wei Lu, Jiang Yin, Bo Xu, Yidong Xia, Zhiguo Liu, Aidong Li
Publikováno v:
Applied Physics Letters; 9/22/2014, Vol. 105 Issue 12, p1-5, 5p, 5 Graphs
Publikováno v:
AIP Advances; May2014, Vol. 4 Issue 5, p1-6, 6p