Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Qianyu Hou"'
Publikováno v:
Micromachines, Vol 14, Iss 10, p 1872 (2023)
Radiation-hardened semiconductor GaN has drawn considerable attention owing to its excellent properties such as large displacement energy. Many studies have focused on evaluating the degradation of GaN-based power device performance by proton beam or
Externí odkaz:
https://doaj.org/article/0ca9ef6078dc4b978ab0a94b9ee6834e
Autor:
Qianyu Hou, Haifan You, Qing Cai, Hui Guo, Pengfei Shao, Danfeng Pan, Le Yu, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 3, Pp 1-8 (2021)
We designed and fabricated narrow-band UV-B AlGaN p-i-n photodiodes (PDs) with a full-width at half-maximum (FWHM) of 8 nm by optimizing the Al composition and thickness of the AlGaN layers. To improve the photoelectric response of the narrow-band PD
Externí odkaz:
https://doaj.org/article/661b5dcf48e5488392a2ced68ba5ff04
Publikováno v:
Toxins, Vol 14, Iss 11, p 742 (2022)
Mycotoxins can occur naturally in a variety of agriculture products, including cereals, feeds, and Chinese herbal medicines (TCMs), via pre- and post-harvest contamination and are regulated worldwide. However, risk mitigation by monitoring for multip
Externí odkaz:
https://doaj.org/article/c54d112860bd46caa7a4e4b735e8d5da
Autor:
Rui Wang, Hui Guo, Qianyu Hou, Jianming Lei, Jin Wang, Junjun Xue, Bin Liu, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Publikováno v:
Micromachines, Vol 13, Iss 7, p 1096 (2022)
In this work, temperature-dependent transient threshold voltage (VT) instability behaviors in p-GaN/AlGaN/GaN HEMTs, with both Schottky gate (SG) and Ohmic gate (OG), were investigated systematically, under negative gate bias stress, by a fast voltag
Externí odkaz:
https://doaj.org/article/71145faeee454c699a58cd8e4ef66ee7
Autor:
Qing Cai, Danfeng Pan, Dunjun Chen, Youdou Zheng, Qunsi Yang, Rong Zhang, Pengfei Shao, Hai Lu, Qianyu Hou
Publikováno v:
IEEE Electron Device Letters. 42:1755-1758
The pursuit of low power consumption, high charge collection efficiency (CCE), and high energy resolution is critical for the development of high performance GaN-based alpha-particle detectors. In this letter, we fabricated a low-voltage p-i-n GaN-ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ea196a7a2af115eca1d9552c17f0f9d
https://doi.org/10.1109/led.2021.3124919
https://doi.org/10.1109/led.2021.3124919
Autor:
Rong Zhang, Pengfei Shao, Hai Lu, Danfeng Pan, L. Yu, Qing Cai, Haifan You, Dunjun Chen, Qianyu Hou, Youdou Zheng, Hui Guo
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 3, Pp 1-8 (2021)
We designed and fabricated narrow-band UV-B AlGaN p-i-n photodiodes (PDs) with a full-width at half-maximum (FWHM) of 8 nm by optimizing the Al composition and thickness of the AlGaN layers. To improve the photoelectric response of the narrow-band PD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cbf37e1cd7b3d01eb22c00e3a5e6597e
https://doi.org/10.1109/jphot.2021.3086855
https://doi.org/10.1109/jphot.2021.3086855
Autor:
Qing Cai, Haifan You, Qianyu Hou, Tao Tao, Zili Xie, Xun Cao, Bin Liu, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Publikováno v:
ACS applied materialsinterfaces.
As a burgeoning wide-band gap semiconductor material, Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d953f21e82b1c36d8ac499888ecace92
https://pubmed.ncbi.nlm.nih.gov/35830680
https://pubmed.ncbi.nlm.nih.gov/35830680