Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Qianying Si"'
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 3, Pp 1-7 (2017)
The photoelectric properties and physical mechanism of AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs) with the superlattice p-type doping layer (PSL) are studied numerically and compared with the Al-composition (50%) conventional p-typ
Externí odkaz:
https://doaj.org/article/0cbdc233187d4b908c9422c0866e67f4
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 3, Pp 1-7 (2017)
The photoelectric properties and physical mechanism of AlGaN-based deep ultraviolet light emitting diodes (DUV-LEDs) with the superlattice p-type doping layer (PSL) are studied numerically and compared with the Al-composition (50%) conventional p-typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b107e349461b4ce3117fb188aa9249e3
https://doi.org/10.1109/jphot.2017.2699322
https://doi.org/10.1109/jphot.2017.2699322