Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Qianwei Kuang"'
Publikováno v:
2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM).
This paper presents an 8-bit 400-MS/s asynchronous single-channel successive approximation register analog-to-digital converter (SAR ADC) with single-ended/differential configurable input mode. In the sampling and holding circuit., three bootstrap sw
Publikováno v:
2018 Eighth International Conference on Instrumentation & Measurement, Computer, Communication and Control (IMCCC).
This paper presents a 10-GS/s sample and hold system, which is designed for a 16-way time-interleaved analog to digital converter (ADC). The sample and hold system is composed of three stage circuits. The multi-stage structure could make the sampling
Publikováno v:
Microelectronics Reliability. 52:1043-1049
Ozone (O3) and H2O are used as the oxidant to deposit hafnium oxide (HfO2) thin films on p-type Si (1 0 0) wafers by atomic layer deposition (ALD). The physical properties and electrical characteristics of HfO2 films change greatly for different oxid
Publikováno v:
Solid-State Electronics. 68:98-102
In this paper, an improved small-signal equivalent model is introduced to eliminate frequency dispersion phenomenon in capacitance–voltage (C–V) measurement, and a new mathematic method is proposed to calculate the amount of bulk defect existing
Publikováno v:
Science China Physics, Mechanics and Astronomy. 53:793-801
The photo-carrier density in the depletion region of the GaN-based p-i-n ultraviolet (UV) detector is calculated by solving the photo-carrier continuity equation, and the photo-carrier screening electric field is calculated according to Poisson’s e
Publikováno v:
Science China Information Sciences. 53:878-884
The electric characteristic of MOS capacitor with HfO2/SiO2/p-Si grown by ALCVD (atom layer chemical vapor deposition) is investigated. The C-V curves show that the accumulation capacitances take on the frequency dispersion at high frequency. For MOS
Publikováno v:
Microelectronics Journal. 41:171-177
Defect detection of integrated circuit (IC) wafer based on two-dimension wavelet transform (2-D DWT) is presented in this paper. By utilizing the characteristics many of the same chips in a wafer, three images with defects located in the same positio
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 23:141-147
In this paper, spectral subtraction is successfully applied to image processing and to detect defects in the integrated circuit (IC) image. By utilizing the characteristics of many of the same chips in a wafer, three images with defects located in th
Publikováno v:
2012 12th International Workshop on Junction Technology.
In this work, we propose an improved small signal equivalent capacitance-voltage (C-V) model to eliminate frequency dispersion in measurement for the AlGaN/GaN heterostructure, and then we calculate the trap density in the buffer layer. Compared with
Publikováno v:
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.
Degradation of electrical characteristics of NdAlO 3 /SiO 2 stack gate under the constant voltage stress (CVS) is presented. It is found that the electron trapping, positive charges and oxide trap generation acts together, which causes the degradatio