Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Qianhui Ge"'
Publikováno v:
Micromachines, Vol 14, Iss 5, p 998 (2023)
A fully integrated and high-efficiency low-dropout regulator (LDO) with 100 mV dropout voltage and nA-level quiescent current for energy harvesting has been proposed and simulated in the 180 nm CMOS process in this paper. A bulk modulation without an
Externí odkaz:
https://doaj.org/article/0708101f39034adea3a01e0f5aad1f00
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d8ca11577a929c9af08ef693ed84ac0
https://doi.org/10.2139/ssrn.4391676
https://doi.org/10.2139/ssrn.4391676