Zobrazeno 1 - 10
of 197
pro vyhledávání: '"Qiang, Kan"'
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 6, Pp 1-7 (2023)
795 nm oxide-confined distributed feedback (DFB) lasers have been developed. The oxide-confined structure is used to realize lateral optical and current confinement, and the first-order surface gratings offer the frequency selectivity for single-long
Externí odkaz:
https://doaj.org/article/7d758fdb60cf420b8a75c128e238d81c
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 4, Pp 1-6 (2021)
The SiO2/SiNx dielectric film stacks deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) are employed on the top of the oxide-confined vertical-cavity surface-emitting lasers (VCSELs). The reflecting mirror characteristics of
Externí odkaz:
https://doaj.org/article/62b2756a2cdf43c7adaf48c5545da118
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-9 (2018)
Abstract In this work, we demonstrate that the electromagnetic properties of graphene oligomer can be drastically modified by locally modifications of the chemical potentials. The chemical potential variations of different positions in graphene oligo
Externí odkaz:
https://doaj.org/article/d66eab929fd94429a20b8fb1d92757a2
Autor:
Pingping Qiu, Weibin Qiu, Junbo Ren, Zhili Lin, Zeyu Wang, Jia-Xian Wang, Qiang Kan, Jiao-Qing Pan
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-7 (2018)
Abstract Originating from the investigation of condensed matter states, the concept of quantum Hall effect and quantum spin Hall effect (QSHE) has recently been expanded to other field of physics and engineering, e.g., photonics and phononics, giving
Externí odkaz:
https://doaj.org/article/e86281192eea479a8287c0348589caf6
Autor:
Yuanfeng Mao, Zhengliang Ren, Lu Guo, Hao Wang, Ruikang Zhang, Yongguang Huang, Dan Lu, Qiang Kan, Chen Ji, Wei Wang
Publikováno v:
IEEE Photonics Journal, Vol 10, Iss 3, Pp 1-8 (2018)
We demonstrate a distributed reflector (DR) laser with the distributed feedback (DFB) section and the distributed Bragg reflector (DBR) section sharing the same multiple-quantum-well structure. The DR laser exhibits a stable dynamic single-longitudin
Externí odkaz:
https://doaj.org/article/c112f827a48a4c41aee09b67029cd54b
Publikováno v:
Journal of Lightwave Technology. 40:5927-5933
Autor:
Liqiang Zhuo, Huiru He, Ruimin Huang, Shaojian Su, Zhili Lin, Weibin Qiu, Beiju Huang, Qiang Kan
Publikováno v:
Nanomaterials, Vol 11, Iss 7, p 1808 (2021)
The valley degree of freedom, like the spin degree of freedom in spintronics, is regarded as a new information carrier, promoting the emerging valley photonics. Although there exist topologically protected valley edge states which are immune to optic
Externí odkaz:
https://doaj.org/article/7d5e97eae1f24c119c396349e4ffc75e
Autor:
Pingping Qiu, Weibin Qiu, Zhili Lin, Houbo Chen, Junbo Ren, Jia-Xian Wang, Qiang Kan, Jiao-Qing Pan
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-8 (2017)
Abstract A graphene-based on-chip plasmonic nanostructure composed of a plasmonic bus waveguide side-coupled with a U-shaped and a rectangular nanocavities has been proposed and modeled by using the finite element method in this paper. The dynamic tu
Externí odkaz:
https://doaj.org/article/026d78eccc554022aca5f707ce257a04
Publikováno v:
IEEE Photonics Journal, Vol 8, Iss 5, Pp 1-9 (2016)
We report a low-cost arrayed waveguide grating (AWG) based mode-locked semiconductor laser designed for multichannel synchronous ultrashort pulse generation. Both the fabrication process and chip characterization results are discussed in detail. By d
Externí odkaz:
https://doaj.org/article/7b0d4f37b64c4dd7941209d1b2a8de05
Autor:
Mengdie Sun, Shaoyang Tan, Fei Guo, Songtao Liu, Qiang Kan, Dan Lu, Ruikang Zhang, Wu Zhao, Song Liang, Wei Wang, Ronald Broeke, Francisco. M. Soares, Chen Ji
Publikováno v:
IEEE Photonics Journal, Vol 8, Iss 4, Pp 1-8 (2016)
We demonstrate a four-wavelength distributed feedback (DFB) diode laser array integrated with a semiconductor optical amplifier (SOA) for widely tunable terahertz (THz) mode-beating generation. The InP-based monolithically integrated chip consists of
Externí odkaz:
https://doaj.org/article/792fcf4c4f484696b24aa3121626b46d